High-precision resistivity measurement of silicon wafer under unstable lift-off distance using inductive and laser sensors-integrated probe
This article proposes a novel contactless method to measure the resistivity of silicon (Si) wafer. In this method, the probe is designed and integrated with an inductive sensor and a laser sensor. The inductive sensor measures the resistivity of Si wafer, and at the same time, the laser sensor detec...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/173477 |
| _version_ | 1811682255239643136 |
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| author | Qu, Zilian Wang, Wensong Yang, Zhengchun Bao, Qiwen Li, Xueli |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Qu, Zilian Wang, Wensong Yang, Zhengchun Bao, Qiwen Li, Xueli |
| author_sort | Qu, Zilian |
| collection | NTU |
| description | This article proposes a novel contactless method to measure the resistivity of silicon (Si) wafer. In this method, the probe is designed and integrated with an inductive sensor and a laser sensor. The inductive sensor measures the resistivity of Si wafer, and at the same time, the laser sensor detects the lift-off distance (LOD) between the coil of inductive sensor and the wafer surface. The measured resistivity of Si wafer by using the inductive sensor is corrected based on the LOD value. The proposed method can effectively avoid the influence of the LOD changes during the measurement, and thus it improves the accuracy of resistivity measurement. In the experiment, the Si wafers where the resistivity ranges from 0.001 to 1 Ω cm are measured by using the inductive sensor only and the proposed method, respectively. Experimental results show that comparing with only using the inductive sensor, the measurement stability and measurement accuracy of the wafer resistivity by the proposed method are significantly improved. |
| first_indexed | 2024-10-01T03:53:56Z |
| format | Journal Article |
| id | ntu-10356/173477 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:53:56Z |
| publishDate | 2024 |
| record_format | dspace |
| spelling | ntu-10356/1734772024-02-06T08:04:11Z High-precision resistivity measurement of silicon wafer under unstable lift-off distance using inductive and laser sensors-integrated probe Qu, Zilian Wang, Wensong Yang, Zhengchun Bao, Qiwen Li, Xueli School of Electrical and Electronic Engineering Engineering Contactless Measurement Probe Integrated Probe This article proposes a novel contactless method to measure the resistivity of silicon (Si) wafer. In this method, the probe is designed and integrated with an inductive sensor and a laser sensor. The inductive sensor measures the resistivity of Si wafer, and at the same time, the laser sensor detects the lift-off distance (LOD) between the coil of inductive sensor and the wafer surface. The measured resistivity of Si wafer by using the inductive sensor is corrected based on the LOD value. The proposed method can effectively avoid the influence of the LOD changes during the measurement, and thus it improves the accuracy of resistivity measurement. In the experiment, the Si wafers where the resistivity ranges from 0.001 to 1 Ω cm are measured by using the inductive sensor only and the proposed method, respectively. Experimental results show that comparing with only using the inductive sensor, the measurement stability and measurement accuracy of the wafer resistivity by the proposed method are significantly improved. This work was supported by the Research and Development Program of Beijing Municipal Education Commission under Grant KM202010857001. 2024-02-06T08:04:11Z 2024-02-06T08:04:11Z 2023 Journal Article Qu, Z., Wang, W., Yang, Z., Bao, Q. & Li, X. (2023). High-precision resistivity measurement of silicon wafer under unstable lift-off distance using inductive and laser sensors-integrated probe. IEEE Transactions On Instrumentation and Measurement, 72, 1-8. https://dx.doi.org/10.1109/TIM.2023.3323998 0018-9456 https://hdl.handle.net/10356/173477 10.1109/TIM.2023.3323998 2-s2.0-85174804509 72 1 8 en IEEE Transactions on Instrumentation and Measurement © 2023 IEEE. All rights reserved. |
| spellingShingle | Engineering Contactless Measurement Probe Integrated Probe Qu, Zilian Wang, Wensong Yang, Zhengchun Bao, Qiwen Li, Xueli High-precision resistivity measurement of silicon wafer under unstable lift-off distance using inductive and laser sensors-integrated probe |
| title | High-precision resistivity measurement of silicon wafer under unstable lift-off distance using inductive and laser sensors-integrated probe |
| title_full | High-precision resistivity measurement of silicon wafer under unstable lift-off distance using inductive and laser sensors-integrated probe |
| title_fullStr | High-precision resistivity measurement of silicon wafer under unstable lift-off distance using inductive and laser sensors-integrated probe |
| title_full_unstemmed | High-precision resistivity measurement of silicon wafer under unstable lift-off distance using inductive and laser sensors-integrated probe |
| title_short | High-precision resistivity measurement of silicon wafer under unstable lift-off distance using inductive and laser sensors-integrated probe |
| title_sort | high precision resistivity measurement of silicon wafer under unstable lift off distance using inductive and laser sensors integrated probe |
| topic | Engineering Contactless Measurement Probe Integrated Probe |
| url | https://hdl.handle.net/10356/173477 |
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