A gate-tunable ambipolar quantum phase transition in a topological excitonic insulator
Coulomb interactions among electrons and holes in 2D semimetals with overlapping valence and conduction bands can give rise to a correlated insulating ground state via exciton formation and condensation. One candidate material in which such excitonic state uniquely combines with non-trivial band top...
| Main Authors: | , , , , , , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2024
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/175467 http://arxiv.org/abs/2309.16260v1 |
| _version_ | 1811684309497544704 |
|---|---|
| author | Que, Yande Chan, Yang-Hao Jia, Junxiang Das, Anirban Tong, Zheng Jue Chang, Yu-Tzu Cui, Zhenhao Kumar, Amit Singh, Gagandeep Mukherjee, Shantanu Lin, Hsin Weber, Bent |
| author2 | School of Physical and Mathematical Sciences |
| author_facet | School of Physical and Mathematical Sciences Que, Yande Chan, Yang-Hao Jia, Junxiang Das, Anirban Tong, Zheng Jue Chang, Yu-Tzu Cui, Zhenhao Kumar, Amit Singh, Gagandeep Mukherjee, Shantanu Lin, Hsin Weber, Bent |
| author_sort | Que, Yande |
| collection | NTU |
| description | Coulomb interactions among electrons and holes in 2D semimetals with overlapping valence and conduction bands can give rise to a correlated insulating ground state via exciton formation and condensation. One candidate material in which such excitonic state uniquely combines with non-trivial band topology are atomic monolayers of tungsten ditelluride (WTe2 ), in which a 2D topological excitonic insulator (2D TEI) forms. However, the detailed mechanism of the 2D bulk gap formation in WTe2 , in particular with regard to the role of Coulomb interactions, has remained a subject of ongoing debate. Here, it shows that WTe2 is susceptible to a gate-tunable quantum phase transition, evident from an abrupt collapse of its 2D bulk energy gap upon ambipolar field-effect doping. Such gate tunability of a 2D TEI, into either n- and p-type semimetals, promises novel handles of control over non-trivial 2D superconductivity with excitonic pairing. |
| first_indexed | 2024-10-01T04:26:35Z |
| format | Journal Article |
| id | ntu-10356/175467 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:26:35Z |
| publishDate | 2024 |
| record_format | dspace |
| spelling | ntu-10356/1754672024-04-29T15:37:21Z A gate-tunable ambipolar quantum phase transition in a topological excitonic insulator Que, Yande Chan, Yang-Hao Jia, Junxiang Das, Anirban Tong, Zheng Jue Chang, Yu-Tzu Cui, Zhenhao Kumar, Amit Singh, Gagandeep Mukherjee, Shantanu Lin, Hsin Weber, Bent School of Physical and Mathematical Sciences Physics Charge density wave Quantum phase transition Coulomb interactions among electrons and holes in 2D semimetals with overlapping valence and conduction bands can give rise to a correlated insulating ground state via exciton formation and condensation. One candidate material in which such excitonic state uniquely combines with non-trivial band topology are atomic monolayers of tungsten ditelluride (WTe2 ), in which a 2D topological excitonic insulator (2D TEI) forms. However, the detailed mechanism of the 2D bulk gap formation in WTe2 , in particular with regard to the role of Coulomb interactions, has remained a subject of ongoing debate. Here, it shows that WTe2 is susceptible to a gate-tunable quantum phase transition, evident from an abrupt collapse of its 2D bulk energy gap upon ambipolar field-effect doping. Such gate tunability of a 2D TEI, into either n- and p-type semimetals, promises novel handles of control over non-trivial 2D superconductivity with excitonic pairing. Ministry of Education (MOE) National Research Foundation (NRF) Submitted/Accepted version This research was supported by the National Research Foundation (NRF)Singapore, under the Competitive Research Programme “Toward On-ChipTopological Quantum Devices” (NRF-CRP21-2018-0001), with partial support from a Singapore Ministry of Education (MOE) Academic ResearchFund Tier three grant (MOE2018-T3-1-002). Y.H.C. acknowledged supportby the Ministry of Science and Technology (MOST) in Taiwan under GrantNo. MOST 112-2112-M-001-048-MY3. S.M. acknowledged the new facultyseed grant from IIT Madras under project number Project No: PHY/18-19/703/NFSC/SHAA. H.L. acknowledged support by the Ministry of Science and Technology (MOST) in Taiwan under Grant No. MOST 109-2112-M-001-014-MY3. B.W. acknowledged a Singapore National Research Foundation (NRF) Fellowship (NRF-NRFF2017-11). 2024-04-25T02:23:18Z 2024-04-25T02:23:18Z 2024 Journal Article Que, Y., Chan, Y., Jia, J., Das, A., Tong, Z. J., Chang, Y., Cui, Z., Kumar, A., Singh, G., Mukherjee, S., Lin, H. & Weber, B. (2024). A gate-tunable ambipolar quantum phase transition in a topological excitonic insulator. Advanced Materials, 36(7), 2309356-. https://dx.doi.org/10.1002/adma.202309356 0935-9648 https://hdl.handle.net/10356/175467 10.1002/adma.202309356 38010877 2-s2.0-85178876104 http://arxiv.org/abs/2309.16260v1 7 36 2309356 en NRF-CRP21-2018-0001 MOE2018-T3-1-002 NRF-NRFF2017-11 Advanced Materials 10.21979/N9/K1WU6V © 2023 Wiley-VCH GmbH. All rights reserved. This article may be downloaded for personal use only. Any other use requires prior permission of the copyright holder. The Version of Record is available online at http://doi.org/10.1002/adma.202309356. application/pdf |
| spellingShingle | Physics Charge density wave Quantum phase transition Que, Yande Chan, Yang-Hao Jia, Junxiang Das, Anirban Tong, Zheng Jue Chang, Yu-Tzu Cui, Zhenhao Kumar, Amit Singh, Gagandeep Mukherjee, Shantanu Lin, Hsin Weber, Bent A gate-tunable ambipolar quantum phase transition in a topological excitonic insulator |
| title | A gate-tunable ambipolar quantum phase transition in a topological excitonic insulator |
| title_full | A gate-tunable ambipolar quantum phase transition in a topological excitonic insulator |
| title_fullStr | A gate-tunable ambipolar quantum phase transition in a topological excitonic insulator |
| title_full_unstemmed | A gate-tunable ambipolar quantum phase transition in a topological excitonic insulator |
| title_short | A gate-tunable ambipolar quantum phase transition in a topological excitonic insulator |
| title_sort | gate tunable ambipolar quantum phase transition in a topological excitonic insulator |
| topic | Physics Charge density wave Quantum phase transition |
| url | https://hdl.handle.net/10356/175467 http://arxiv.org/abs/2309.16260v1 |
| work_keys_str_mv | AT queyande agatetunableambipolarquantumphasetransitioninatopologicalexcitonicinsulator AT chanyanghao agatetunableambipolarquantumphasetransitioninatopologicalexcitonicinsulator AT jiajunxiang agatetunableambipolarquantumphasetransitioninatopologicalexcitonicinsulator AT dasanirban agatetunableambipolarquantumphasetransitioninatopologicalexcitonicinsulator AT tongzhengjue agatetunableambipolarquantumphasetransitioninatopologicalexcitonicinsulator AT changyutzu agatetunableambipolarquantumphasetransitioninatopologicalexcitonicinsulator AT cuizhenhao agatetunableambipolarquantumphasetransitioninatopologicalexcitonicinsulator AT kumaramit agatetunableambipolarquantumphasetransitioninatopologicalexcitonicinsulator AT singhgagandeep agatetunableambipolarquantumphasetransitioninatopologicalexcitonicinsulator AT mukherjeeshantanu agatetunableambipolarquantumphasetransitioninatopologicalexcitonicinsulator AT linhsin agatetunableambipolarquantumphasetransitioninatopologicalexcitonicinsulator AT weberbent agatetunableambipolarquantumphasetransitioninatopologicalexcitonicinsulator AT queyande gatetunableambipolarquantumphasetransitioninatopologicalexcitonicinsulator AT chanyanghao gatetunableambipolarquantumphasetransitioninatopologicalexcitonicinsulator AT jiajunxiang gatetunableambipolarquantumphasetransitioninatopologicalexcitonicinsulator AT dasanirban gatetunableambipolarquantumphasetransitioninatopologicalexcitonicinsulator AT tongzhengjue gatetunableambipolarquantumphasetransitioninatopologicalexcitonicinsulator AT changyutzu gatetunableambipolarquantumphasetransitioninatopologicalexcitonicinsulator AT cuizhenhao gatetunableambipolarquantumphasetransitioninatopologicalexcitonicinsulator AT kumaramit gatetunableambipolarquantumphasetransitioninatopologicalexcitonicinsulator AT singhgagandeep gatetunableambipolarquantumphasetransitioninatopologicalexcitonicinsulator AT mukherjeeshantanu gatetunableambipolarquantumphasetransitioninatopologicalexcitonicinsulator AT linhsin gatetunableambipolarquantumphasetransitioninatopologicalexcitonicinsulator AT weberbent gatetunableambipolarquantumphasetransitioninatopologicalexcitonicinsulator |