Conductive bridge random access memory
This paper outlines an exploration into the electrical behavior of conductive bridge random-access memory (CBRAM), featuring a Silver (Ag) top electrode (TE), with the switching layer comprised of Germanium Sulfide (GeS) and Molybdenum Disulfide (MoS2), while the bottom electrode (BE) utilises...
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| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2024
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| Online Access: | https://hdl.handle.net/10356/176304 |
| _version_ | 1811686902525329408 |
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| author | Goh, Zu Hong |
| author2 | Ang Diing Shenp |
| author_facet | Ang Diing Shenp Goh, Zu Hong |
| author_sort | Goh, Zu Hong |
| collection | NTU |
| description | This paper outlines an exploration into the electrical behavior of conductive bridge
random-access memory (CBRAM), featuring a Silver (Ag) top electrode (TE), with the
switching layer comprised of Germanium Sulfide (GeS) and Molybdenum Disulfide
(MoS2), while the bottom electrode (BE) utilises Platinum (Pt). The addition of MoS2
layer, which is a semiconducting 2D transition metal dichalcogenide (TMDs), has ion
modulation properties which increases reliability of GeS-based CBRAM. The
experimental results show bipolar resistive switching at higher compliance current (Icc)
and threshold resistive switching at lower Icc. It also achieved Ion/Ioff ratio of 10^7, making it a great candidate for memory devices. |
| first_indexed | 2024-10-01T05:07:48Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/176304 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:07:48Z |
| publishDate | 2024 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1763042024-05-17T15:45:07Z Conductive bridge random access memory Goh, Zu Hong Ang Diing Shenp School of Electrical and Electronic Engineering EDSAng@ntu.edu.sg Engineering This paper outlines an exploration into the electrical behavior of conductive bridge random-access memory (CBRAM), featuring a Silver (Ag) top electrode (TE), with the switching layer comprised of Germanium Sulfide (GeS) and Molybdenum Disulfide (MoS2), while the bottom electrode (BE) utilises Platinum (Pt). The addition of MoS2 layer, which is a semiconducting 2D transition metal dichalcogenide (TMDs), has ion modulation properties which increases reliability of GeS-based CBRAM. The experimental results show bipolar resistive switching at higher compliance current (Icc) and threshold resistive switching at lower Icc. It also achieved Ion/Ioff ratio of 10^7, making it a great candidate for memory devices. Bachelor's degree 2024-05-15T08:05:29Z 2024-05-15T08:05:29Z 2024 Final Year Project (FYP) Goh, Z. H. (2024). Conductive bridge random access memory. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/176304 https://hdl.handle.net/10356/176304 en A2016-231 application/pdf Nanyang Technological University |
| spellingShingle | Engineering Goh, Zu Hong Conductive bridge random access memory |
| title | Conductive bridge random access memory |
| title_full | Conductive bridge random access memory |
| title_fullStr | Conductive bridge random access memory |
| title_full_unstemmed | Conductive bridge random access memory |
| title_short | Conductive bridge random access memory |
| title_sort | conductive bridge random access memory |
| topic | Engineering |
| url | https://hdl.handle.net/10356/176304 |
| work_keys_str_mv | AT gohzuhong conductivebridgerandomaccessmemory |