Conductive bridge random access memory

Conductive bridge random access memory

This paper outlines an exploration into the electrical behavior of conductive bridge random-access memory (CBRAM), featuring a Silver (Ag) top electrode (TE), with the switching layer comprised of Germanium Sulfide (GeS) and Molybdenum Disulfide (MoS2), while the bottom electrode (BE) utilises...

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Bibliographic Details
Main Author: Goh, Zu Hong
Other Authors: Ang Diing Shenp
Format: Final Year Project (FYP)
Language:English
Published: Nanyang Technological University 2024
Subjects:
Engineering
Online Access:https://hdl.handle.net/10356/176304

Internet

https://hdl.handle.net/10356/176304

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