Conductive bridge random access memory
This research paper contains a background of the current memory devices and the working principles as well as their limitations. As there is a high data storage demand in the future, new emerging technology is required to increase the memory storage density and improve computing efficiency. It also...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2024
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| Online Access: | https://hdl.handle.net/10356/176617 |
| _version_ | 1811676241649991680 |
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| author | Chia, Zong Xian |
| author2 | Ang Diing Shenp |
| author_facet | Ang Diing Shenp Chia, Zong Xian |
| author_sort | Chia, Zong Xian |
| collection | NTU |
| description | This research paper contains a background of the current memory devices and the working principles as well as their limitations. As there is a high data storage demand in the future, new emerging technology is required to increase the memory storage density and improve computing efficiency. It also includes a literature review on emerging devices with the potential to replace the current technologies with an in-depth discussion on Resistive Random Access Memory (RRAM) which is intensively being studied specifically the Conductive Bridge Random Access Memory (CBRAM). It also includes electrical characteristics studies on a CBRAM device that compromises a Metal-Insulator-Metal structure of Silver (Ag) as the active electrode, Titanium Nitride (TiN) and Germanium Sulfide (GeS) used for the switching layer and Platinum (Pt) for the counter electrode which seeks to comprehend the operating characteristics of this particular device with various DC measurements. |
| first_indexed | 2024-10-01T02:18:21Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/176617 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:18:21Z |
| publishDate | 2024 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1766172024-05-24T15:50:10Z Conductive bridge random access memory Chia, Zong Xian Ang Diing Shenp School of Electrical and Electronic Engineering EDSAng@ntu.edu.sg Engineering This research paper contains a background of the current memory devices and the working principles as well as their limitations. As there is a high data storage demand in the future, new emerging technology is required to increase the memory storage density and improve computing efficiency. It also includes a literature review on emerging devices with the potential to replace the current technologies with an in-depth discussion on Resistive Random Access Memory (RRAM) which is intensively being studied specifically the Conductive Bridge Random Access Memory (CBRAM). It also includes electrical characteristics studies on a CBRAM device that compromises a Metal-Insulator-Metal structure of Silver (Ag) as the active electrode, Titanium Nitride (TiN) and Germanium Sulfide (GeS) used for the switching layer and Platinum (Pt) for the counter electrode which seeks to comprehend the operating characteristics of this particular device with various DC measurements. Bachelor's degree 2024-05-18T12:15:15Z 2024-05-18T12:15:15Z 2024 Final Year Project (FYP) Chia, Z. X. (2024). Conductive bridge random access memory. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/176617 https://hdl.handle.net/10356/176617 en application/pdf Nanyang Technological University |
| spellingShingle | Engineering Chia, Zong Xian Conductive bridge random access memory |
| title | Conductive bridge random access memory |
| title_full | Conductive bridge random access memory |
| title_fullStr | Conductive bridge random access memory |
| title_full_unstemmed | Conductive bridge random access memory |
| title_short | Conductive bridge random access memory |
| title_sort | conductive bridge random access memory |
| topic | Engineering |
| url | https://hdl.handle.net/10356/176617 |
| work_keys_str_mv | AT chiazongxian conductivebridgerandomaccessmemory |