Conductive bridge random access memory
As technology are consistently improving at a very fast rate over the years, current technologies are not able to continue supporting the high demands of specification for the newly developed applications due to lacking in terms of speed and storage density. As a result, the requirements for t...
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| Andre forfattere: | |
| Format: | Final Year Project (FYP) |
| Sprog: | English |
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Nanyang Technological University
2024
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| Online adgang: | https://hdl.handle.net/10356/176674 |
| _version_ | 1826113277974806528 |
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| author | Loh, Zhen Xuan |
| author2 | Ang Diing Shenp |
| author_facet | Ang Diing Shenp Loh, Zhen Xuan |
| author_sort | Loh, Zhen Xuan |
| collection | NTU |
| description | As technology are consistently improving at a very fast rate over the years, current
technologies are not able to continue supporting the high demands of specification for the
newly developed applications due to lacking in terms of speed and storage density. As a
result, the requirements for the establishment of advance memory technologies and
computational system for efficient computing with larger storage density are tremendous. The
need of doing in-depth research on the advance technologies is then becoming increasingly
necessary. A study of the characteristics and functionality of
Conductive-Based Resistive Random Access Memory (CBRAM) will be presented. The device is a metal-insulator-metal (MIM) structure with the materials used being silver (Ag) as active electrode,
titanium nitride and germanium suldfide (TiN/GeS) as switching layer, and platinum (Pt) as
counter electrode. |
| first_indexed | 2024-10-01T03:20:36Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/176674 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:20:36Z |
| publishDate | 2024 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1766742024-05-24T15:49:39Z Conductive bridge random access memory Loh, Zhen Xuan Ang Diing Shenp School of Electrical and Electronic Engineering EDSAng@ntu.edu.sg Engineering CBRAM As technology are consistently improving at a very fast rate over the years, current technologies are not able to continue supporting the high demands of specification for the newly developed applications due to lacking in terms of speed and storage density. As a result, the requirements for the establishment of advance memory technologies and computational system for efficient computing with larger storage density are tremendous. The need of doing in-depth research on the advance technologies is then becoming increasingly necessary. A study of the characteristics and functionality of Conductive-Based Resistive Random Access Memory (CBRAM) will be presented. The device is a metal-insulator-metal (MIM) structure with the materials used being silver (Ag) as active electrode, titanium nitride and germanium suldfide (TiN/GeS) as switching layer, and platinum (Pt) as counter electrode. Bachelor's degree 2024-05-20T02:47:51Z 2024-05-20T02:47:51Z 2024 Final Year Project (FYP) Loh, Z. X. (2024). Conductive bridge random access memory. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/176674 https://hdl.handle.net/10356/176674 en A2019-231 application/pdf Nanyang Technological University |
| spellingShingle | Engineering CBRAM Loh, Zhen Xuan Conductive bridge random access memory |
| title | Conductive bridge random access memory |
| title_full | Conductive bridge random access memory |
| title_fullStr | Conductive bridge random access memory |
| title_full_unstemmed | Conductive bridge random access memory |
| title_short | Conductive bridge random access memory |
| title_sort | conductive bridge random access memory |
| topic | Engineering CBRAM |
| url | https://hdl.handle.net/10356/176674 |
| work_keys_str_mv | AT lohzhenxuan conductivebridgerandomaccessmemory |