Flexible silicon (Si) nanomembranes and devices
This project demonstrates how to fabricate the Silicon nanomembrane device and test its performance under different strain conditions, hence creating applications within the flexible electronics industry. Raman spectroscopy is an effective tool used to determine and characterise the magnitude and...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2024
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| Online Access: | https://hdl.handle.net/10356/176824 |
| _version_ | 1811687771975188480 |
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| author | Ko, Keng Wee |
| author2 | Kim Munho |
| author_facet | Kim Munho Ko, Keng Wee |
| author_sort | Ko, Keng Wee |
| collection | NTU |
| description | This project demonstrates how to fabricate the Silicon nanomembrane device and test its
performance under different strain conditions, hence creating applications within the flexible
electronics industry. Raman spectroscopy is an effective tool used to determine and characterise
the magnitude and type of strain a material experiences, the performance of the device can also
be determined through the Raman Spectroscopy. It is observed from the experiment conducted
that under a tensile strain of 28.53 radii of curvature, the PET device experiences a 0.295%
strain with a Raman peak shift of 0.994 cm-1 to the left and under a compressive strain of 40.28
radii of curvature, the PET device experiences a -0.452% strain with a Raman peak shift of
1.52278 cm-1 to the right. Additionally, under no light condition the photodetector produces a
dark saturation current of -5E-10A at -2V and 8E-10A at 2V and under light condition the
photodetector produces a saturated photo current at -2.5E-09A at -2V and 3E-09A at 2V. |
| first_indexed | 2024-10-01T05:21:37Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/176824 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:21:37Z |
| publishDate | 2024 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1768242024-05-24T15:43:21Z Flexible silicon (Si) nanomembranes and devices Ko, Keng Wee Kim Munho School of Electrical and Electronic Engineering munho.kim@ntu.edu.sg Engineering This project demonstrates how to fabricate the Silicon nanomembrane device and test its performance under different strain conditions, hence creating applications within the flexible electronics industry. Raman spectroscopy is an effective tool used to determine and characterise the magnitude and type of strain a material experiences, the performance of the device can also be determined through the Raman Spectroscopy. It is observed from the experiment conducted that under a tensile strain of 28.53 radii of curvature, the PET device experiences a 0.295% strain with a Raman peak shift of 0.994 cm-1 to the left and under a compressive strain of 40.28 radii of curvature, the PET device experiences a -0.452% strain with a Raman peak shift of 1.52278 cm-1 to the right. Additionally, under no light condition the photodetector produces a dark saturation current of -5E-10A at -2V and 8E-10A at 2V and under light condition the photodetector produces a saturated photo current at -2.5E-09A at -2V and 3E-09A at 2V. Bachelor's degree 2024-05-20T07:10:56Z 2024-05-20T07:10:56Z 2024 Final Year Project (FYP) Ko, K. W. (2024). Flexible silicon (Si) nanomembranes and devices. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/176824 https://hdl.handle.net/10356/176824 en application/pdf Nanyang Technological University |
| spellingShingle | Engineering Ko, Keng Wee Flexible silicon (Si) nanomembranes and devices |
| title | Flexible silicon (Si) nanomembranes and devices |
| title_full | Flexible silicon (Si) nanomembranes and devices |
| title_fullStr | Flexible silicon (Si) nanomembranes and devices |
| title_full_unstemmed | Flexible silicon (Si) nanomembranes and devices |
| title_short | Flexible silicon (Si) nanomembranes and devices |
| title_sort | flexible silicon si nanomembranes and devices |
| topic | Engineering |
| url | https://hdl.handle.net/10356/176824 |
| work_keys_str_mv | AT kokengwee flexiblesiliconsinanomembranesanddevices |