| Summary: | Atomically thin two-dimensional (2D) Materials, including graphene, hexagonal boron nitride (h-BN), Black Phosphorus (BP), Indium Selenide (InSe), transitional metal dichalcogenides (TMDCs), exhibits a wide spreading of energy bandgap values. Through direct van der Waals stacking, 2D material heterostructures can be formed without concerns on lattice mismatch. All these contributes to an entire new degree of freedom for designing new-structured promising photodetectors. Today, various different structured photodetectors based on 2D materials have been reported and the market is still foreseen to be expanding.
In this report, a comprehensive literature review on 2D material based photodetectors has been summarized, followed with an introduction to device fabrication/characterization process. A polarization resolved mid-wave infrared (MWIR) BP-based Schottky photodiode has been demonstrated. Under specific polarization angle, the device exhibits a high potential absorption rate, responsivity of 7.51 mA/W, and EQE of 0.26% under zero bias. This integration offers an alternative to state-of-the-art MWIR photodetectors, maintaining performance while significantly reducing fabrication complexities and low power consumption.
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