Biaxial strain effect on band structures and optical properties of GeSn/Ge quantum well
With the advancement and proliferation of technology, the use of Si photonics has become prevalent to realise the high performance of computers and energy efficient data transfer [1]. The use of Grp3-5 semiconductors has been a very promising prospect in various applications such as CMOS technology,...
Main Author: | Ting, Shi En |
---|---|
Other Authors: | Fan Weijun |
Format: | Final Year Project (FYP) |
Language: | English |
Published: |
Nanyang Technological University
2024
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/177132 |
Similar Items
-
“GeSn Rule-23”—The Performance Limit of GeSn Infrared Photodiodes
by: Guo-En Chang, et al.
Published: (2023-08-01) -
Tensile strained direct bandgap GeSn microbridges enabled in GeSn-on-insulator substrates with residual tensile strain
by: Burt, Daniel, et al.
Published: (2023) -
Investigation of GeSn/Ge quantum dots’ optical transitions for integrated optics on Si substrate
by: Mourad Baira, et al.
Published: (2019-03-01) -
Theoretical Analysis of GeSn Quantum Dots for Photodetection Applications
by: Pin-Hao Lin, et al.
Published: (2024-02-01) -
Strain relaxation of germanium-tin (GeSn) fins
by: Kang, Yuye, et al.
Published: (2018)