2D material based high performance photodetectors (I)
Photodetectors play a crucial role in modern technology, enabling devices to detect and convert light into an electric signal. As technology advances, there is a growing demand for high-performance photodetectors that can offer enhanced sensitivity, accuracy, and efficiency. In recent years, the eme...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2024
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| Online Access: | https://hdl.handle.net/10356/177194 |
| _version_ | 1811688315571666944 |
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| author | Panicker, Varsha |
| author2 | Wang Qijie |
| author_facet | Wang Qijie Panicker, Varsha |
| author_sort | Panicker, Varsha |
| collection | NTU |
| description | Photodetectors play a crucial role in modern technology, enabling devices to detect and convert light into an electric signal. As technology advances, there is a growing demand for high-performance photodetectors that can offer enhanced sensitivity, accuracy, and efficiency. In recent years, the emergence of 2D materials has opened up new possibilities for improving the performance of photodetectors, especially in the field of graphene-based field-effect transistors (FETs).
These innovations may lead to the development of more efficient and sensitive photodetection systems, benefiting fields such as communications, imaging, sensing, and renewable energy.
Because graphene has better optical and electrical qualities than other potential materials like silicon or germanium, it is thought to be the best material for producing high-functioning and high-performance photosensors.
The primary goal of the project is to build a field effect transistor (GrFET) based on graphene and conduct analysis on photodetection measurements. These studies provide a more in-depth analysis and research on the use of graphene as a sensor since its discovery. This project mainly includes - Extraction Process which consists of splitting large pieces of Graphite into extremely thin slices. The next step which is the Transfer process in which the selected graphene slice side is made in contact with the silicon wafer transferred over on to the PCB. Lastly diagnostic tests and polarization experiments were done which provides more information on the optoelectronic properties of graphene as a sensor. |
| first_indexed | 2024-10-01T05:30:15Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/177194 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:30:15Z |
| publishDate | 2024 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1771942024-05-31T15:43:48Z 2D material based high performance photodetectors (I) Panicker, Varsha Wang Qijie School of Electrical and Electronic Engineering qjwang@ntu.edu.sg Engineering Photodetectors play a crucial role in modern technology, enabling devices to detect and convert light into an electric signal. As technology advances, there is a growing demand for high-performance photodetectors that can offer enhanced sensitivity, accuracy, and efficiency. In recent years, the emergence of 2D materials has opened up new possibilities for improving the performance of photodetectors, especially in the field of graphene-based field-effect transistors (FETs). These innovations may lead to the development of more efficient and sensitive photodetection systems, benefiting fields such as communications, imaging, sensing, and renewable energy. Because graphene has better optical and electrical qualities than other potential materials like silicon or germanium, it is thought to be the best material for producing high-functioning and high-performance photosensors. The primary goal of the project is to build a field effect transistor (GrFET) based on graphene and conduct analysis on photodetection measurements. These studies provide a more in-depth analysis and research on the use of graphene as a sensor since its discovery. This project mainly includes - Extraction Process which consists of splitting large pieces of Graphite into extremely thin slices. The next step which is the Transfer process in which the selected graphene slice side is made in contact with the silicon wafer transferred over on to the PCB. Lastly diagnostic tests and polarization experiments were done which provides more information on the optoelectronic properties of graphene as a sensor. Bachelor's degree 2024-05-27T02:52:15Z 2024-05-27T02:52:15Z 2024 Final Year Project (FYP) Panicker, V. (2024). 2D material based high performance photodetectors (I). Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/177194 https://hdl.handle.net/10356/177194 en A2236-231 application/pdf Nanyang Technological University |
| spellingShingle | Engineering Panicker, Varsha 2D material based high performance photodetectors (I) |
| title | 2D material based high performance photodetectors (I) |
| title_full | 2D material based high performance photodetectors (I) |
| title_fullStr | 2D material based high performance photodetectors (I) |
| title_full_unstemmed | 2D material based high performance photodetectors (I) |
| title_short | 2D material based high performance photodetectors (I) |
| title_sort | 2d material based high performance photodetectors i |
| topic | Engineering |
| url | https://hdl.handle.net/10356/177194 |
| work_keys_str_mv | AT panickervarsha 2dmaterialbasedhighperformancephotodetectorsi |