Giant third-order nonlinear Hall effect in misfit layer compound (SnS)1.17(NbS2)3

The nonlinear Hall effect (NLHE) holds immense significance in recognizing the band geometry and its potential applications in current rectification. Recent discoveries have expanded the study from second-order to third-order nonlinear Hall effect (THE), which is governed by an intrinsic band geomet...

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Main Authors: Li, Shengyao, Wang, Xueyan, Yang, Zherui, Zhang, Lijuan, Teo, Siew Lang, Lin, Ming, He, Ri, Wang, Naizhou, Song, Peng, Tian, Wanghao, Loh, Xian Jun, Zhu, Qiang, Sun, Bo, Wang, Renshaw Xiao
Other Authors: School of Physical and Mathematical Sciences
Format: Journal Article
Language:English
Published: 2024
Subjects:
Online Access:https://hdl.handle.net/10356/178098
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author Li, Shengyao
Wang, Xueyan
Yang, Zherui
Zhang, Lijuan
Teo, Siew Lang
Lin, Ming
He, Ri
Wang, Naizhou
Song, Peng
Tian, Wanghao
Loh, Xian Jun
Zhu, Qiang
Sun, Bo
Wang, Renshaw Xiao
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Li, Shengyao
Wang, Xueyan
Yang, Zherui
Zhang, Lijuan
Teo, Siew Lang
Lin, Ming
He, Ri
Wang, Naizhou
Song, Peng
Tian, Wanghao
Loh, Xian Jun
Zhu, Qiang
Sun, Bo
Wang, Renshaw Xiao
author_sort Li, Shengyao
collection NTU
description The nonlinear Hall effect (NLHE) holds immense significance in recognizing the band geometry and its potential applications in current rectification. Recent discoveries have expanded the study from second-order to third-order nonlinear Hall effect (THE), which is governed by an intrinsic band geometric quantity called the Berry Connection Polarizability tensor. Here we demonstrate a giant THE in a misfit layer compound, (SnS)1.17(NbS2)3. While the THE is prohibited in individual NbS2 and SnS due to the constraints imposed by the crystal symmetry and their band structures, a remarkable THE emerges when a superlattice is formed by introducing a monolayer of SnS. The angular-dependent THE and its scaling relationship indicate that the phenomenon could be correlated to the band geometry modulation, concurrently with the symmetry breaking. The resulting strength of THE is orders of magnitude higher compared to recent studies. Our work illuminates the modulation of structural and electronic geometries for novel quantum phenomena through interface engineering.
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spelling ntu-10356/1780982024-06-04T06:53:00Z Giant third-order nonlinear Hall effect in misfit layer compound (SnS)1.17(NbS2)3 Li, Shengyao Wang, Xueyan Yang, Zherui Zhang, Lijuan Teo, Siew Lang Lin, Ming He, Ri Wang, Naizhou Song, Peng Tian, Wanghao Loh, Xian Jun Zhu, Qiang Sun, Bo Wang, Renshaw Xiao School of Physical and Mathematical Sciences School of Electrical and Electronic Engineering School of Chemistry, Chemical Engineering and Biotechnology Institute of Materials Research and Engineering, A*STAR Institute of Sustainability for Chemicals, A*STAR Engineering Berry connection polarizability Berry curvature dipole The nonlinear Hall effect (NLHE) holds immense significance in recognizing the band geometry and its potential applications in current rectification. Recent discoveries have expanded the study from second-order to third-order nonlinear Hall effect (THE), which is governed by an intrinsic band geometric quantity called the Berry Connection Polarizability tensor. Here we demonstrate a giant THE in a misfit layer compound, (SnS)1.17(NbS2)3. While the THE is prohibited in individual NbS2 and SnS due to the constraints imposed by the crystal symmetry and their band structures, a remarkable THE emerges when a superlattice is formed by introducing a monolayer of SnS. The angular-dependent THE and its scaling relationship indicate that the phenomenon could be correlated to the band geometry modulation, concurrently with the symmetry breaking. The resulting strength of THE is orders of magnitude higher compared to recent studies. Our work illuminates the modulation of structural and electronic geometries for novel quantum phenomena through interface engineering. Agency for Science, Technology and Research (A*STAR) Ministry of Education (MOE) L.Z. acknowledges the support from the National Natural Science Foundation of China (No. 52002206). X.R.W. acknowledges support from the Singapore Ministry of Education under its Academic Research Fund (AcRF) Tier 1 (Grant No. RG82/23), Tier 2 (Grant Nos. MOE-T2EP50120-0006 and MOE-T2EP50220-0005), and Tier 3 (Grant No. MOE2018-T3-1-002), and the Agency for Science, Technology and Research (A*STAR) under its AME IRG grant (Project No. A20E5c0094). 2024-06-04T06:53:00Z 2024-06-04T06:53:00Z 2024 Journal Article Li, S., Wang, X., Yang, Z., Zhang, L., Teo, S. L., Lin, M., He, R., Wang, N., Song, P., Tian, W., Loh, X. J., Zhu, Q., Sun, B. & Wang, R. X. (2024). Giant third-order nonlinear Hall effect in misfit layer compound (SnS)1.17(NbS2)3. ACS Applied Materials and Interfaces, 16(8), 11043-11049. https://dx.doi.org/10.1021/acsami.3c18319 1944-8244 https://hdl.handle.net/10356/178098 10.1021/acsami.3c18319 38349718 2-s2.0-85185597807 8 16 11043 11049 en RG82/23 MOE-T2EP50120-0006 MOE-T2EP50220-0005 MOE2018-T3-1-002 A20E5c0094 ACS Applied Materials and Interfaces © 2024 American Chemical Society. All rights reserved.
spellingShingle Engineering
Berry connection polarizability
Berry curvature dipole
Li, Shengyao
Wang, Xueyan
Yang, Zherui
Zhang, Lijuan
Teo, Siew Lang
Lin, Ming
He, Ri
Wang, Naizhou
Song, Peng
Tian, Wanghao
Loh, Xian Jun
Zhu, Qiang
Sun, Bo
Wang, Renshaw Xiao
Giant third-order nonlinear Hall effect in misfit layer compound (SnS)1.17(NbS2)3
title Giant third-order nonlinear Hall effect in misfit layer compound (SnS)1.17(NbS2)3
title_full Giant third-order nonlinear Hall effect in misfit layer compound (SnS)1.17(NbS2)3
title_fullStr Giant third-order nonlinear Hall effect in misfit layer compound (SnS)1.17(NbS2)3
title_full_unstemmed Giant third-order nonlinear Hall effect in misfit layer compound (SnS)1.17(NbS2)3
title_short Giant third-order nonlinear Hall effect in misfit layer compound (SnS)1.17(NbS2)3
title_sort giant third order nonlinear hall effect in misfit layer compound sns 1 17 nbs2 3
topic Engineering
Berry connection polarizability
Berry curvature dipole
url https://hdl.handle.net/10356/178098
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