Robust nuclear spin polarization via ground-state level anticrossing of boron vacancy defects in hexagonal boron nitride
Nuclear spin polarization plays a crucial role in quantum information processing and quantum sensing. In this work, we demonstrate a robust and efficient method for nuclear spin polarization with boron vacancy (VB-) defects in hexagonal boron nitride (h-BN) using ground-state level anticrossing (GSL...
| Main Authors: | , , , , , , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/178861 |
| _version_ | 1826116365887471616 |
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| author | Ru, Shihao Jiang, Zhengzhi Liang, Haidong Kenny, Jonathan Cai, Hongbing Lyu, Xiaodan Cernansky, Robert Zhou, Feifei Yang, Yuzhe Watanabe, Kenji Taniguch, Takashi Li, Fuli Koh, Teck Seng Liu, Xiaogang Jelezko, Fedor Bettiol, Andrew A. Gao, Weibo |
| author2 | School of Physical and Mathematical Sciences |
| author_facet | School of Physical and Mathematical Sciences Ru, Shihao Jiang, Zhengzhi Liang, Haidong Kenny, Jonathan Cai, Hongbing Lyu, Xiaodan Cernansky, Robert Zhou, Feifei Yang, Yuzhe Watanabe, Kenji Taniguch, Takashi Li, Fuli Koh, Teck Seng Liu, Xiaogang Jelezko, Fedor Bettiol, Andrew A. Gao, Weibo |
| author_sort | Ru, Shihao |
| collection | NTU |
| description | Nuclear spin polarization plays a crucial role in quantum information processing and quantum sensing. In this work, we demonstrate a robust and efficient method for nuclear spin polarization with boron vacancy (VB-) defects in hexagonal boron nitride (h-BN) using ground-state level anticrossing (GSLAC). We show that GSLAC-assisted nuclear polarization can be achieved with significantly lower laser power than excited-state level anticrossing, making the process experimentally more viable. Furthermore, we have demonstrated direct optical readout of nuclear spins for VB- in h-BN. Our findings suggest that GSLAC is a promising technique for the precise control and manipulation of nuclear spins in VB- defects in h-BN. |
| first_indexed | 2024-10-01T04:10:12Z |
| format | Journal Article |
| id | ntu-10356/178861 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:10:12Z |
| publishDate | 2024 |
| record_format | dspace |
| spelling | ntu-10356/1788612024-07-09T06:06:19Z Robust nuclear spin polarization via ground-state level anticrossing of boron vacancy defects in hexagonal boron nitride Ru, Shihao Jiang, Zhengzhi Liang, Haidong Kenny, Jonathan Cai, Hongbing Lyu, Xiaodan Cernansky, Robert Zhou, Feifei Yang, Yuzhe Watanabe, Kenji Taniguch, Takashi Li, Fuli Koh, Teck Seng Liu, Xiaogang Jelezko, Fedor Bettiol, Andrew A. Gao, Weibo School of Physical and Mathematical Sciences Centre for Quantum Technologies, NUS The Photonics Institute Centre for Disruptive Photonic Technologies (CDPT) Physics Quantum Optics Silicon Carbide Nuclear spin polarization plays a crucial role in quantum information processing and quantum sensing. In this work, we demonstrate a robust and efficient method for nuclear spin polarization with boron vacancy (VB-) defects in hexagonal boron nitride (h-BN) using ground-state level anticrossing (GSLAC). We show that GSLAC-assisted nuclear polarization can be achieved with significantly lower laser power than excited-state level anticrossing, making the process experimentally more viable. Furthermore, we have demonstrated direct optical readout of nuclear spins for VB- in h-BN. Our findings suggest that GSLAC is a promising technique for the precise control and manipulation of nuclear spins in VB- defects in h-BN. Agency for Science, Technology and Research (A*STAR) Ministry of Education (MOE) National Research Foundation (NRF) S. R., J. K., H. B., X D., F. Z., Y. Z., and W. G. acknowledge Singapore National Research foundation through QEP Grants (NRF2021-QEP2-01-P01, NRF2021-QEP2- 01-P02, NRF2021-QEP2-03-P01, NRF2021-QEP2-03-P10, NRF2021-QEP2-03-P11), Agency for Science, Technology and Research Individual Research Grant (M21K2c0116) and Singapore Ministry of Education [MOE2016-T3-1-006 (S)], the Australian Research Council (via CE200100010), and the Asian Office of Aerospace Research and Development Grant No. FA2386-17-1-4064, Office of Naval Research Global (N62909-22-1-2028). F. J. acknowledges the support of Federal Ministry of Education and Research BMBF, ERC (Synergy Grant HyperQ), European Commission (Projects FLORIN, QCIRCLE QuMICRO), DFG (Excellence Cluster POLiS, CRC 1279, and Projects No. 499424854, No. 387073854) and Carl Zeiss Stiftung. H. L. and A. A. B. acknowledge Singapore Ministry of Education (MOE-T2EP50221-0009). 2024-07-09T06:06:19Z 2024-07-09T06:06:19Z 2024 Journal Article Ru, S., Jiang, Z., Liang, H., Kenny, J., Cai, H., Lyu, X., Cernansky, R., Zhou, F., Yang, Y., Watanabe, K., Taniguch, T., Li, F., Koh, T. S., Liu, X., Jelezko, F., Bettiol, A. A. & Gao, W. (2024). Robust nuclear spin polarization via ground-state level anticrossing of boron vacancy defects in hexagonal boron nitride. Physical Review Letters, 132(26), 266801-. https://dx.doi.org/10.1103/PhysRevLett.132.266801 0031-9007 https://hdl.handle.net/10356/178861 10.1103/PhysRevLett.132.266801 2-s2.0-85196882880 26 132 266801 en NRF2021-QEP2-01-P01 NRF2021-QEP2-01-P02 NRF2021-QEP2-03-P01 NRF2021-QEP2-03-P10 NRF2021-QEP2-03-P11 M21K2c0116 MOE2016-T3-1-006 (S) Physical Review Letters © 2024 American Physical Society. All rights reserved. |
| spellingShingle | Physics Quantum Optics Silicon Carbide Ru, Shihao Jiang, Zhengzhi Liang, Haidong Kenny, Jonathan Cai, Hongbing Lyu, Xiaodan Cernansky, Robert Zhou, Feifei Yang, Yuzhe Watanabe, Kenji Taniguch, Takashi Li, Fuli Koh, Teck Seng Liu, Xiaogang Jelezko, Fedor Bettiol, Andrew A. Gao, Weibo Robust nuclear spin polarization via ground-state level anticrossing of boron vacancy defects in hexagonal boron nitride |
| title | Robust nuclear spin polarization via ground-state level anticrossing of boron vacancy defects in hexagonal boron nitride |
| title_full | Robust nuclear spin polarization via ground-state level anticrossing of boron vacancy defects in hexagonal boron nitride |
| title_fullStr | Robust nuclear spin polarization via ground-state level anticrossing of boron vacancy defects in hexagonal boron nitride |
| title_full_unstemmed | Robust nuclear spin polarization via ground-state level anticrossing of boron vacancy defects in hexagonal boron nitride |
| title_short | Robust nuclear spin polarization via ground-state level anticrossing of boron vacancy defects in hexagonal boron nitride |
| title_sort | robust nuclear spin polarization via ground state level anticrossing of boron vacancy defects in hexagonal boron nitride |
| topic | Physics Quantum Optics Silicon Carbide |
| url | https://hdl.handle.net/10356/178861 |
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