Robust nuclear spin polarization via ground-state level anticrossing of boron vacancy defects in hexagonal boron nitride

Robust nuclear spin polarization via ground-state level anticrossing of boron vacancy defects in hexagonal boron nitride

Nuclear spin polarization plays a crucial role in quantum information processing and quantum sensing. In this work, we demonstrate a robust and efficient method for nuclear spin polarization with boron vacancy (VB-) defects in hexagonal boron nitride (h-BN) using ground-state level anticrossing (GSL...

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Bibliographic Details
Main Authors: Ru, Shihao, Jiang, Zhengzhi, Liang, Haidong, Kenny, Jonathan, Cai, Hongbing, Lyu, Xiaodan, Cernansky, Robert, Zhou, Feifei, Yang, Yuzhe, Watanabe, Kenji, Taniguch, Takashi, Li, Fuli, Koh, Teck Seng, Liu, Xiaogang, Jelezko, Fedor, Bettiol, Andrew A., Gao, Weibo
Other Authors: School of Physical and Mathematical Sciences
Format: Journal Article
Language:English
Published: 2024
Subjects:
Physics
Quantum Optics
Silicon Carbide
Online Access:https://hdl.handle.net/10356/178861

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