Study on characterization and parameter extraction techniques for GaN high electron mobility transistors
In recent decades, environmental concerns and rising energy costs have brought to light the critical need for sophisticated power electronics and RF communication systems. GaN, a semiconductor material with a broad bandgap, is renowned for its exceptional physical characteristics, which render it ex...
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| Format: | Thesis-Master by Coursework |
| Language: | English |
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Nanyang Technological University
2024
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| Online Access: | https://hdl.handle.net/10356/178986 |