Granular magnetization switching in Pt/Co/Ti structure with HfOx insertion for in-memory computing applications

Granular magnetization switching in Pt/Co/Ti structure with HfOx insertion for in-memory computing applications

Exploring multiple states based on the domain wall (DW) position has garnered increased attention for in-memory computing applications, particularly focusing on the utilization of spin-orbit torque (SOT) to drive DW motion. However, devices relying on the DW position require efficient DW pinning. He...

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Bibliographic Details
Main Authors: Jin, Tianli, Zhang, Bo, Tan, Funan, Lim, Gerard Joseph, Chen, Ze, Cao, Jiangwei, Lew, Wen Siang
Other Authors: School of Physical and Mathematical Sciences
Format: Journal Article
Language:English
Published: 2024
Subjects:
Physics
Artificial synapses
Domain wall nucleation
Online Access:https://hdl.handle.net/10356/179391

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