Van der Waals encapsulation by ultra-thin oxide for air-sensitive 2D materials
The ambient stability is one of the focal points for applications of 2D materials, especially for those well-known air-sensitive ones such as black phosphorus (BP) and transitional metal telluride. Traditional methods of encapsulation, such as atomic layer deposition of oxides and heterogeneous inte...
| Main Authors: | , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/179479 |
| _version_ | 1826124238824669184 |
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| author | Yi, Kongyang Wu, Yao An, Liheng Deng, Ya Duan, Ruihuan Yang, Jiefu Zhu, Chao Gao, Weibo Liu, Zheng |
| author2 | School of Materials Science and Engineering |
| author_facet | School of Materials Science and Engineering Yi, Kongyang Wu, Yao An, Liheng Deng, Ya Duan, Ruihuan Yang, Jiefu Zhu, Chao Gao, Weibo Liu, Zheng |
| author_sort | Yi, Kongyang |
| collection | NTU |
| description | The ambient stability is one of the focal points for applications of 2D materials, especially for those well-known air-sensitive ones such as black phosphorus (BP) and transitional metal telluride. Traditional methods of encapsulation, such as atomic layer deposition of oxides and heterogeneous integration of hexagonal boron nitride, can hardly avoid removal of encapsulation layer when the 2D materials are encapsulated for further device fabrication, which causes complexity and damage during the procedure. Here, a van der Waals encapsulation method that allows direct device fabrication without removal of encapsulation layer is introduced using Ga2O3 from liquid gallium. Taking advantage of the robust isolation ability against ambient environment of the dense native oxide of gallium, hundreds of times longer retention time of (opto)electronic properties of encapsulated BP and MoTe2 devices is realized than unencapsulated devices. Due to the ultra-thin high-κ properties of Ga2O3, top-gated devices are directly fabricated with the encapsulation layer, simultaneously as a dielectric layer. This direct device fabrication is realized by selective etching of Ga2O3, leaving the encapsulated materials intact. Encapsulated 1T' MoTe2 exhibits high conductivity even after 150 days in ambient environment. This method is therefore highlighted as a promising and distinctive one compared with traditional passivation approaches. |
| first_indexed | 2024-10-01T06:17:23Z |
| format | Journal Article |
| id | ntu-10356/179479 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:17:23Z |
| publishDate | 2024 |
| record_format | dspace |
| spelling | ntu-10356/1794792024-08-05T00:57:54Z Van der Waals encapsulation by ultra-thin oxide for air-sensitive 2D materials Yi, Kongyang Wu, Yao An, Liheng Deng, Ya Duan, Ruihuan Yang, Jiefu Zhu, Chao Gao, Weibo Liu, Zheng School of Materials Science and Engineering School of Physical and Mathematical Sciences Engineering 2D materials Ambient stability The ambient stability is one of the focal points for applications of 2D materials, especially for those well-known air-sensitive ones such as black phosphorus (BP) and transitional metal telluride. Traditional methods of encapsulation, such as atomic layer deposition of oxides and heterogeneous integration of hexagonal boron nitride, can hardly avoid removal of encapsulation layer when the 2D materials are encapsulated for further device fabrication, which causes complexity and damage during the procedure. Here, a van der Waals encapsulation method that allows direct device fabrication without removal of encapsulation layer is introduced using Ga2O3 from liquid gallium. Taking advantage of the robust isolation ability against ambient environment of the dense native oxide of gallium, hundreds of times longer retention time of (opto)electronic properties of encapsulated BP and MoTe2 devices is realized than unencapsulated devices. Due to the ultra-thin high-κ properties of Ga2O3, top-gated devices are directly fabricated with the encapsulation layer, simultaneously as a dielectric layer. This direct device fabrication is realized by selective etching of Ga2O3, leaving the encapsulated materials intact. Encapsulated 1T' MoTe2 exhibits high conductivity even after 150 days in ambient environment. This method is therefore highlighted as a promising and distinctive one compared with traditional passivation approaches. Agency for Science, Technology and Research (A*STAR) Ministry of Education (MOE) National Research Foundation (NRF) 2024-08-05T00:57:54Z 2024-08-05T00:57:54Z 2024 Journal Article Yi, K., Wu, Y., An, L., Deng, Y., Duan, R., Yang, J., Zhu, C., Gao, W. & Liu, Z. (2024). Van der Waals encapsulation by ultra-thin oxide for air-sensitive 2D materials. Advanced Materials, e2403494-. https://dx.doi.org/10.1002/adma.202403494 0935-9648 https://hdl.handle.net/10356/179479 10.1002/adma.202403494 38863206 2-s2.0-85196560046 e2403494 en NRF-CRP22-2019- 0007 NRF-CRP22-2019-0004 NRF2020-NRF-ISF004-3520 EDUNC-33-18-279-V12 A2083c0052 M23M2b0056 Advanced Materials © 2024 Wiley-VCH GmbH. All rights reserved. |
| spellingShingle | Engineering 2D materials Ambient stability Yi, Kongyang Wu, Yao An, Liheng Deng, Ya Duan, Ruihuan Yang, Jiefu Zhu, Chao Gao, Weibo Liu, Zheng Van der Waals encapsulation by ultra-thin oxide for air-sensitive 2D materials |
| title | Van der Waals encapsulation by ultra-thin oxide for air-sensitive 2D materials |
| title_full | Van der Waals encapsulation by ultra-thin oxide for air-sensitive 2D materials |
| title_fullStr | Van der Waals encapsulation by ultra-thin oxide for air-sensitive 2D materials |
| title_full_unstemmed | Van der Waals encapsulation by ultra-thin oxide for air-sensitive 2D materials |
| title_short | Van der Waals encapsulation by ultra-thin oxide for air-sensitive 2D materials |
| title_sort | van der waals encapsulation by ultra thin oxide for air sensitive 2d materials |
| topic | Engineering 2D materials Ambient stability |
| url | https://hdl.handle.net/10356/179479 |
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