Programmable interfacial band configuration in WS2/Bi2O2Se heterojunctions
van der Waals heterojunctions based on transition-metal dichalcogenides (TMDs) offer advanced strategies for manipulating light-emitting and light-harvesting behaviors. A crucial factor determining the light-material interaction is in the band alignment at the heterojunction interface, particularly...
| Main Authors: | , , , , , , , , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/179498 |
| _version_ | 1824456847277424640 |
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| author | Zhang, Hanwen Fu, Jianhui Carvalho, Alexandra Poh, Eng Tuan Chung, Jing-Yang Feng, Minjun Chen, Yinzhu Wang, Bo Shang, Qiuyu Yang, Hengxing Zhang, Zheng Lim, Sharon Xiaodai Gao, Weibo Gradečak, Silvija Qiu, Cheng-Wei Lu, Junpeng He, Chunnian Sum, Tze Chien Sow, Chorng Haur |
| author2 | School of Physical and Mathematical Sciences |
| author_facet | School of Physical and Mathematical Sciences Zhang, Hanwen Fu, Jianhui Carvalho, Alexandra Poh, Eng Tuan Chung, Jing-Yang Feng, Minjun Chen, Yinzhu Wang, Bo Shang, Qiuyu Yang, Hengxing Zhang, Zheng Lim, Sharon Xiaodai Gao, Weibo Gradečak, Silvija Qiu, Cheng-Wei Lu, Junpeng He, Chunnian Sum, Tze Chien Sow, Chorng Haur |
| author_sort | Zhang, Hanwen |
| collection | NTU |
| description | van der Waals heterojunctions based on transition-metal dichalcogenides (TMDs) offer advanced strategies for manipulating light-emitting and light-harvesting behaviors. A crucial factor determining the light-material interaction is in the band alignment at the heterojunction interface, particularly the distinctions between type-I and type-II alignments. However, altering the band alignment from one type to another without changing the constituent materials is exceptionally difficult. Here, utilizing Bi2O2Se with a thickness-dependent band gap as a bottom layer, we present an innovative strategy for engineering interfacial band configurations in WS2/Bi2O2Se heterojunctions. In particular, we achieve tuning of the band alignment from type-I (Bi2O2Se straddling WS2) to type-II and finally to type-I (WS2 straddling Bi2O2Se) by increasing the thickness of the Bi2O2Se bottom layer from monolayer to multilayer. We verified this band architecture conversion using steady-state and transient spectroscopy as well as density functional theory calculations. Using this material combination, we further design a sophisticated band architecture incorporating both type-I (WS2 straddles Bi2O2Se, fluorescence-quenched) and type-I (Bi2SeO5 straddles WS2, fluorescence-recovered) alignments in one sample through focused laser beam (FLB). By programming the FLB trajectory, we achieve a predesigned localized fluorescence micropattern on WS2 without changing its intrinsic atomic structure. This effective band architecture design strategy represents a significant leap forward in harnessing the potential of TMD heterojunctions for multifunctional photonic applications. |
| first_indexed | 2025-02-19T04:00:36Z |
| format | Journal Article |
| id | ntu-10356/179498 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T04:00:36Z |
| publishDate | 2024 |
| record_format | dspace |
| spelling | ntu-10356/1794982024-08-05T08:11:01Z Programmable interfacial band configuration in WS2/Bi2O2Se heterojunctions Zhang, Hanwen Fu, Jianhui Carvalho, Alexandra Poh, Eng Tuan Chung, Jing-Yang Feng, Minjun Chen, Yinzhu Wang, Bo Shang, Qiuyu Yang, Hengxing Zhang, Zheng Lim, Sharon Xiaodai Gao, Weibo Gradečak, Silvija Qiu, Cheng-Wei Lu, Junpeng He, Chunnian Sum, Tze Chien Sow, Chorng Haur School of Physical and Mathematical Sciences Physics 2D materials Band alignment van der Waals heterojunctions based on transition-metal dichalcogenides (TMDs) offer advanced strategies for manipulating light-emitting and light-harvesting behaviors. A crucial factor determining the light-material interaction is in the band alignment at the heterojunction interface, particularly the distinctions between type-I and type-II alignments. However, altering the band alignment from one type to another without changing the constituent materials is exceptionally difficult. Here, utilizing Bi2O2Se with a thickness-dependent band gap as a bottom layer, we present an innovative strategy for engineering interfacial band configurations in WS2/Bi2O2Se heterojunctions. In particular, we achieve tuning of the band alignment from type-I (Bi2O2Se straddling WS2) to type-II and finally to type-I (WS2 straddling Bi2O2Se) by increasing the thickness of the Bi2O2Se bottom layer from monolayer to multilayer. We verified this band architecture conversion using steady-state and transient spectroscopy as well as density functional theory calculations. Using this material combination, we further design a sophisticated band architecture incorporating both type-I (WS2 straddles Bi2O2Se, fluorescence-quenched) and type-I (Bi2SeO5 straddles WS2, fluorescence-recovered) alignments in one sample through focused laser beam (FLB). By programming the FLB trajectory, we achieve a predesigned localized fluorescence micropattern on WS2 without changing its intrinsic atomic structure. This effective band architecture design strategy represents a significant leap forward in harnessing the potential of TMD heterojunctions for multifunctional photonic applications. A.C. acknowledges the support from the Ministry of Education, Singapore, under its Research Centre of Excellence award to the Institute for Functional Intelligent Materials, National University of Singapore (I-FIM, project no. EDUNC-33-18-279-V12). C.W.Q. acknowledges financial support from the NRF, Prime Minister’s Office, Singapore under the Competitive Research Program Award (NRF-CRP26-2021-0063). 2024-08-05T08:11:01Z 2024-08-05T08:11:01Z 2024 Journal Article Zhang, H., Fu, J., Carvalho, A., Poh, E. T., Chung, J., Feng, M., Chen, Y., Wang, B., Shang, Q., Yang, H., Zhang, Z., Lim, S. X., Gao, W., Gradečak, S., Qiu, C., Lu, J., He, C., Sum, T. C. & Sow, C. H. (2024). Programmable interfacial band configuration in WS2/Bi2O2Se heterojunctions. ACS Nano, 18(26), 16832-16841. https://dx.doi.org/10.1021/acsnano.4c02496 1936-0851 https://hdl.handle.net/10356/179498 10.1021/acsnano.4c02496 38888500 2-s2.0-85196759759 26 18 16832 16841 en ACS Nano © 2024 American Chemical Society. All rights reserved. |
| spellingShingle | Physics 2D materials Band alignment Zhang, Hanwen Fu, Jianhui Carvalho, Alexandra Poh, Eng Tuan Chung, Jing-Yang Feng, Minjun Chen, Yinzhu Wang, Bo Shang, Qiuyu Yang, Hengxing Zhang, Zheng Lim, Sharon Xiaodai Gao, Weibo Gradečak, Silvija Qiu, Cheng-Wei Lu, Junpeng He, Chunnian Sum, Tze Chien Sow, Chorng Haur Programmable interfacial band configuration in WS2/Bi2O2Se heterojunctions |
| title | Programmable interfacial band configuration in WS2/Bi2O2Se heterojunctions |
| title_full | Programmable interfacial band configuration in WS2/Bi2O2Se heterojunctions |
| title_fullStr | Programmable interfacial band configuration in WS2/Bi2O2Se heterojunctions |
| title_full_unstemmed | Programmable interfacial band configuration in WS2/Bi2O2Se heterojunctions |
| title_short | Programmable interfacial band configuration in WS2/Bi2O2Se heterojunctions |
| title_sort | programmable interfacial band configuration in ws2 bi2o2se heterojunctions |
| topic | Physics 2D materials Band alignment |
| url | https://hdl.handle.net/10356/179498 |
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