General synthesis of metal indium sulfide atomic layers for photocatalysis
The metal indium sulfides have attracted extensive research interest in photocatalysis due to regulable atomic configuration and excellent optoelectronic properties. However, the synthesis of metal indium sulfide atomic layers is still challenging since intrinsic non-van-der-Waals layered structures...
| Main Authors: | , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2024
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| Online Access: | https://hdl.handle.net/10356/179507 |
| _version_ | 1811692150832758784 |
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| author | Di, Jun Chen, Chao Zhu, Chao Cao, Xun Xiong, Jun Long, Ran Li, Shuzhou Jiang, Wei Liu, Zheng |
| author2 | School of Materials Science and Engineering |
| author_facet | School of Materials Science and Engineering Di, Jun Chen, Chao Zhu, Chao Cao, Xun Xiong, Jun Long, Ran Li, Shuzhou Jiang, Wei Liu, Zheng |
| author_sort | Di, Jun |
| collection | NTU |
| description | The metal indium sulfides have attracted extensive research interest in photocatalysis due to regulable atomic configuration and excellent optoelectronic properties. However, the synthesis of metal indium sulfide atomic layers is still challenging since intrinsic non-van-der-Waals layered structures of some components. Here, a surfactant self-assembly growth mechanism is proposed to controllably synthesize metal indium sulfide atomic layers. Eleven types of atomic layers with tunable compositions, thickness, and defect concentrations are successfully achieved namely In2S3, MgIn2S4, CaIn2S4, MnIn2S4, FeIn2S4, ZnIn2S4, Zn2In2S5, Zn4In16S33, CuInS2, CuIn5S8, and CdIn2S4. The typical CaIn2S4 shows a defect-dependence activity for CO2 photoreduction. The designed S vacancies in CaIn2S4 can serve as catalytic centers to activate CO2 molecules via localized electrons for π-back-donation. The engineered S vacancies tune the non-covalent interaction with CO2 and intermediates, manages to tune the free energy, and lower the reaction energy barrier. As a result, the defect-rich CaIn2S4 displays 2.82× improved reduction rate than defect-poor CaIn2S4. Meantime, other components also display promising photocatalytic performance, such as Zn2In2S5 with a H2O2 photosynthesis rate of 292 µmol g-1 h-1 and CuInS2 with N2-NH4 + conversion rate of 54 µmol g-1 h-1. This work paves the way for the multidisciplinary exploration of metal indium sulfide atomic layers with unique photocatalysis properties. |
| first_indexed | 2024-10-01T06:31:13Z |
| format | Journal Article |
| id | ntu-10356/179507 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:31:13Z |
| publishDate | 2024 |
| record_format | dspace |
| spelling | ntu-10356/1795072024-08-06T04:16:38Z General synthesis of metal indium sulfide atomic layers for photocatalysis Di, Jun Chen, Chao Zhu, Chao Cao, Xun Xiong, Jun Long, Ran Li, Shuzhou Jiang, Wei Liu, Zheng School of Materials Science and Engineering Engineering Atomic layers General synthesis The metal indium sulfides have attracted extensive research interest in photocatalysis due to regulable atomic configuration and excellent optoelectronic properties. However, the synthesis of metal indium sulfide atomic layers is still challenging since intrinsic non-van-der-Waals layered structures of some components. Here, a surfactant self-assembly growth mechanism is proposed to controllably synthesize metal indium sulfide atomic layers. Eleven types of atomic layers with tunable compositions, thickness, and defect concentrations are successfully achieved namely In2S3, MgIn2S4, CaIn2S4, MnIn2S4, FeIn2S4, ZnIn2S4, Zn2In2S5, Zn4In16S33, CuInS2, CuIn5S8, and CdIn2S4. The typical CaIn2S4 shows a defect-dependence activity for CO2 photoreduction. The designed S vacancies in CaIn2S4 can serve as catalytic centers to activate CO2 molecules via localized electrons for π-back-donation. The engineered S vacancies tune the non-covalent interaction with CO2 and intermediates, manages to tune the free energy, and lower the reaction energy barrier. As a result, the defect-rich CaIn2S4 displays 2.82× improved reduction rate than defect-poor CaIn2S4. Meantime, other components also display promising photocatalytic performance, such as Zn2In2S5 with a H2O2 photosynthesis rate of 292 µmol g-1 h-1 and CuInS2 with N2-NH4 + conversion rate of 54 µmol g-1 h-1. This work paves the way for the multidisciplinary exploration of metal indium sulfide atomic layers with unique photocatalysis properties. Ministry of Education (MOE) This work was supported by National Natural Science Foundation of China (No. 22205108, 22378206), Jiangsu Specially Appointed Professorship, Fundamental Research Funds for the Central Universities (No.30922010302), Singapore Ministry of Education AcRF Tier 2 (MOE-MOET2EP10121-0006). 2024-08-06T04:16:38Z 2024-08-06T04:16:38Z 2024 Journal Article Di, J., Chen, C., Zhu, C., Cao, X., Xiong, J., Long, R., Li, S., Jiang, W. & Liu, Z. (2024). General synthesis of metal indium sulfide atomic layers for photocatalysis. Small, e2402808-. https://dx.doi.org/10.1002/smll.202402808 1613-6810 https://hdl.handle.net/10356/179507 10.1002/smll.202402808 38764281 2-s2.0-85193344424 e2402808 en MOE-MOET2EP10121-0006 Small © 2024 Wiley-VCH GmbH. All rights reserved. |
| spellingShingle | Engineering Atomic layers General synthesis Di, Jun Chen, Chao Zhu, Chao Cao, Xun Xiong, Jun Long, Ran Li, Shuzhou Jiang, Wei Liu, Zheng General synthesis of metal indium sulfide atomic layers for photocatalysis |
| title | General synthesis of metal indium sulfide atomic layers for photocatalysis |
| title_full | General synthesis of metal indium sulfide atomic layers for photocatalysis |
| title_fullStr | General synthesis of metal indium sulfide atomic layers for photocatalysis |
| title_full_unstemmed | General synthesis of metal indium sulfide atomic layers for photocatalysis |
| title_short | General synthesis of metal indium sulfide atomic layers for photocatalysis |
| title_sort | general synthesis of metal indium sulfide atomic layers for photocatalysis |
| topic | Engineering Atomic layers General synthesis |
| url | https://hdl.handle.net/10356/179507 |
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