| Summary: | In0.17Al0.83N/GaN high-electron-mobility transistor (HEMT) using GaN-on-Insulator (GaNOI) technology via 200 mm wafer bonding technique is developed with good DC and RF performance and high fT/fmax. Measurements obtained from X-Ray diffraction and micro-Raman spectroscopy have demonstrated a 5% reduction in “a lattice strain,” which results in the improvement of the sheet resistance (Rsh) from 301 to 284 Ω □−1. A 120 nm gate-length device achieves a peak fT up to 96 GHz which yields a fT × Lg value of 11.5 GHz μm, which compares favorably with reported GaN-based HEMTs on Si. These results demonstrate that GaNOI HEMT on Si is an attractive candidate for future mm-wave applications. The implementation of GaNOI technology facilitates the integration of GaN devices into a chip alongside complementary metal–oxide–semiconductor technology that opens up the potential for integrated high-power and RF applications, enabling more compact and efficient systems.
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