First demonstration of high-frequency InAlN/GaN high-electron-mobility transistor using GaN-on-insulator technology via 200 mm wafer bonding
In0.17Al0.83N/GaN high-electron-mobility transistor (HEMT) using GaN-on-Insulator (GaNOI) technology via 200 mm wafer bonding technique is developed with good DC and RF performance and high fT/fmax. Measurements obtained from X-Ray diffraction and micro-Raman spectroscopy have demonstrated a 5% redu...
| Main Authors: | , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2024
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| Online Access: | https://hdl.handle.net/10356/179546 |
| _version_ | 1826109643650236416 |
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| author | Li, Hanchao Xie, Hanlin Wang, Yue Yulia, Lekina Ranjan, Kumud Singh, Navab Chung, Surasit Lee, Kenneth E. Arulkumaran, Subramaniam Ng, Geok Ing |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Li, Hanchao Xie, Hanlin Wang, Yue Yulia, Lekina Ranjan, Kumud Singh, Navab Chung, Surasit Lee, Kenneth E. Arulkumaran, Subramaniam Ng, Geok Ing |
| author_sort | Li, Hanchao |
| collection | NTU |
| description | In0.17Al0.83N/GaN high-electron-mobility transistor (HEMT) using GaN-on-Insulator (GaNOI) technology via 200 mm wafer bonding technique is developed with good DC and RF performance and high fT/fmax. Measurements obtained from X-Ray diffraction and micro-Raman spectroscopy have demonstrated a 5% reduction in “a lattice strain,” which results in the improvement of the sheet resistance (Rsh) from 301 to 284 Ω □−1. A 120 nm gate-length device achieves a peak fT up to 96 GHz which yields a fT × Lg value of 11.5 GHz μm, which compares favorably with reported GaN-based HEMTs on Si. These results demonstrate that GaNOI HEMT on Si is an attractive candidate for future mm-wave applications. The implementation of GaNOI technology facilitates the integration of GaN devices into a chip alongside complementary metal–oxide–semiconductor technology that opens up the potential for integrated high-power and RF applications, enabling more compact and efficient systems. |
| first_indexed | 2024-10-01T02:21:37Z |
| format | Journal Article |
| id | ntu-10356/179546 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:21:37Z |
| publishDate | 2024 |
| record_format | dspace |
| spelling | ntu-10356/1795462024-08-07T06:30:39Z First demonstration of high-frequency InAlN/GaN high-electron-mobility transistor using GaN-on-insulator technology via 200 mm wafer bonding Li, Hanchao Xie, Hanlin Wang, Yue Yulia, Lekina Ranjan, Kumud Singh, Navab Chung, Surasit Lee, Kenneth E. Arulkumaran, Subramaniam Ng, Geok Ing School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences Institute of Microelectronics, A*STAR Singapore-MIT Alliance for Research and Technology Temasek Laboratories @ NTU Engineering GaN-on-Insulator InAlN/GaN In0.17Al0.83N/GaN high-electron-mobility transistor (HEMT) using GaN-on-Insulator (GaNOI) technology via 200 mm wafer bonding technique is developed with good DC and RF performance and high fT/fmax. Measurements obtained from X-Ray diffraction and micro-Raman spectroscopy have demonstrated a 5% reduction in “a lattice strain,” which results in the improvement of the sheet resistance (Rsh) from 301 to 284 Ω □−1. A 120 nm gate-length device achieves a peak fT up to 96 GHz which yields a fT × Lg value of 11.5 GHz μm, which compares favorably with reported GaN-based HEMTs on Si. These results demonstrate that GaNOI HEMT on Si is an attractive candidate for future mm-wave applications. The implementation of GaNOI technology facilitates the integration of GaN devices into a chip alongside complementary metal–oxide–semiconductor technology that opens up the potential for integrated high-power and RF applications, enabling more compact and efficient systems. Agency for Science, Technology and Research (A*STAR) This research/project was supported by A*STAR under the RIE2025Manufacturing, Trade, and Connectivity Programmatic Fund (AwardM21K6b0134). 2024-08-07T06:30:39Z 2024-08-07T06:30:39Z 2024 Journal Article Li, H., Xie, H., Wang, Y., Yulia, L., Ranjan, K., Singh, N., Chung, S., Lee, K. E., Arulkumaran, S. & Ng, G. I. (2024). First demonstration of high-frequency InAlN/GaN high-electron-mobility transistor using GaN-on-insulator technology via 200 mm wafer bonding. Physica Status Solidi (A) Applications and Materials Science, 2300953-. https://dx.doi.org/10.1002/pssa.202300953 1862-6300 https://hdl.handle.net/10356/179546 10.1002/pssa.202300953 2-s2.0-85192940835 2300953 en M21K6b0134 Physica Status Solidi (A) Applications and Materials Science © 2024 Wiley-VCH GmbH. All rights reserved. |
| spellingShingle | Engineering GaN-on-Insulator InAlN/GaN Li, Hanchao Xie, Hanlin Wang, Yue Yulia, Lekina Ranjan, Kumud Singh, Navab Chung, Surasit Lee, Kenneth E. Arulkumaran, Subramaniam Ng, Geok Ing First demonstration of high-frequency InAlN/GaN high-electron-mobility transistor using GaN-on-insulator technology via 200 mm wafer bonding |
| title | First demonstration of high-frequency InAlN/GaN high-electron-mobility transistor using GaN-on-insulator technology via 200 mm wafer bonding |
| title_full | First demonstration of high-frequency InAlN/GaN high-electron-mobility transistor using GaN-on-insulator technology via 200 mm wafer bonding |
| title_fullStr | First demonstration of high-frequency InAlN/GaN high-electron-mobility transistor using GaN-on-insulator technology via 200 mm wafer bonding |
| title_full_unstemmed | First demonstration of high-frequency InAlN/GaN high-electron-mobility transistor using GaN-on-insulator technology via 200 mm wafer bonding |
| title_short | First demonstration of high-frequency InAlN/GaN high-electron-mobility transistor using GaN-on-insulator technology via 200 mm wafer bonding |
| title_sort | first demonstration of high frequency inaln gan high electron mobility transistor using gan on insulator technology via 200 mm wafer bonding |
| topic | Engineering GaN-on-Insulator InAlN/GaN |
| url | https://hdl.handle.net/10356/179546 |
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