Investigation of persistent photoconductivity of gallium nitride semiconductor and differentiation of primary neural stem cells

A gallium nitride (GaN) semiconductor is one of the most promising materials integrated into biomedical devices to play the roles of connecting, monitoring, and manipulating the activity of biological components, due to its excellent photoelectric properties, chemical stability, and biocompatibility...

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Main Authors: Meng, Yu, Du, Xiaowei, Zhou, Shang, Li, Jiangting, Feng, Rongrong, Zhang, Huaiwei, Xu, Qianhui, Zhao, Weidong, Liu, Zheng, Zhong, Haijian
Other Authors: School of Materials Science and Engineering
Format: Journal Article
Language:English
Published: 2024
Subjects:
Online Access:https://hdl.handle.net/10356/180471
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author Meng, Yu
Du, Xiaowei
Zhou, Shang
Li, Jiangting
Feng, Rongrong
Zhang, Huaiwei
Xu, Qianhui
Zhao, Weidong
Liu, Zheng
Zhong, Haijian
author2 School of Materials Science and Engineering
author_facet School of Materials Science and Engineering
Meng, Yu
Du, Xiaowei
Zhou, Shang
Li, Jiangting
Feng, Rongrong
Zhang, Huaiwei
Xu, Qianhui
Zhao, Weidong
Liu, Zheng
Zhong, Haijian
author_sort Meng, Yu
collection NTU
description A gallium nitride (GaN) semiconductor is one of the most promising materials integrated into biomedical devices to play the roles of connecting, monitoring, and manipulating the activity of biological components, due to its excellent photoelectric properties, chemical stability, and biocompatibility. In this work, it was found that the photogenerated free charge carriers of the GaN substrate, as an exogenous stimulus, served to promote neural stem cells (NSCs) to differentiate into neurons. This was observed through the systematic investigation of the effect of the persistent photoconductivity (PPC) of GaN on the differentiation of primary NSCs from the embryonic rat cerebral cortex. NSCs were directly cultured on the GaN surface with and without ultraviolet (UV) irradiation, with a control sample consisting of tissue culture polystyrene (TCPS) in the presence of fetal bovine serum (FBS) medium. Through optical microscopy, the morphology showed a greater number of neurons with the branching structures of axons and dendrites on GaN with UV irradiation. The immunocytochemical results demonstrated that GaN with UV irradiation could promote the NSCs to differentiate into neurons. Western blot analysis showed that GaN with UV irradiation significantly upregulated the expression of two neuron-related markers, βIII-tubulin (Tuj-1) and microtubule-associated protein 2 (MAP-2), suggesting that neurite formation and the proliferation of NSCs during differentiation were enhanced by GaN with UV irradiation. Finally, the results of the Kelvin probe force microscope (KPFM) experiments showed that the NSCs cultured on GaN with UV irradiation displayed about 50 mV higher potential than those cultured on GaN without irradiation. The increase in cell membrane potential may have been due to the larger number of photogenerated free charges on the GaN surface with UV irradiation. These results could benefit topical research and the application of GaN as a biomedical material integrated into neural interface systems or other bioelectronic devices.
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spelling ntu-10356/1804712024-10-11T15:46:22Z Investigation of persistent photoconductivity of gallium nitride semiconductor and differentiation of primary neural stem cells Meng, Yu Du, Xiaowei Zhou, Shang Li, Jiangting Feng, Rongrong Zhang, Huaiwei Xu, Qianhui Zhao, Weidong Liu, Zheng Zhong, Haijian School of Materials Science and Engineering Engineering Neural stem cells Semiconductor biointerface A gallium nitride (GaN) semiconductor is one of the most promising materials integrated into biomedical devices to play the roles of connecting, monitoring, and manipulating the activity of biological components, due to its excellent photoelectric properties, chemical stability, and biocompatibility. In this work, it was found that the photogenerated free charge carriers of the GaN substrate, as an exogenous stimulus, served to promote neural stem cells (NSCs) to differentiate into neurons. This was observed through the systematic investigation of the effect of the persistent photoconductivity (PPC) of GaN on the differentiation of primary NSCs from the embryonic rat cerebral cortex. NSCs were directly cultured on the GaN surface with and without ultraviolet (UV) irradiation, with a control sample consisting of tissue culture polystyrene (TCPS) in the presence of fetal bovine serum (FBS) medium. Through optical microscopy, the morphology showed a greater number of neurons with the branching structures of axons and dendrites on GaN with UV irradiation. The immunocytochemical results demonstrated that GaN with UV irradiation could promote the NSCs to differentiate into neurons. Western blot analysis showed that GaN with UV irradiation significantly upregulated the expression of two neuron-related markers, βIII-tubulin (Tuj-1) and microtubule-associated protein 2 (MAP-2), suggesting that neurite formation and the proliferation of NSCs during differentiation were enhanced by GaN with UV irradiation. Finally, the results of the Kelvin probe force microscope (KPFM) experiments showed that the NSCs cultured on GaN with UV irradiation displayed about 50 mV higher potential than those cultured on GaN without irradiation. The increase in cell membrane potential may have been due to the larger number of photogenerated free charges on the GaN surface with UV irradiation. These results could benefit topical research and the application of GaN as a biomedical material integrated into neural interface systems or other bioelectronic devices. Published version This research was funded by the National Natural Science Foundation of China (grant number: 61674164, 62164001, and 22004020), the Natural Science Foundation of Jiangxi Province (grant number: 20202ZDB01018), the Open Project of the Key Laboratory of Prevention and Treatment of Cardiovascular and Cerebrovascular Diseases Ministry of Education of China (grant number: XN201903), the Startup Funds for High-Level Talent of Gannan Medical University (grant number: QD201906 and QD202011), the School-Level Project of Gannan Medical University (grant number: YB201942), and the Special Funds for Graduate Innovation of Gannan Medical University (grant number: YC2021-S802). 2024-10-08T06:56:09Z 2024-10-08T06:56:09Z 2024 Journal Article Meng, Y., Du, X., Zhou, S., Li, J., Feng, R., Zhang, H., Xu, Q., Zhao, W., Liu, Z. & Zhong, H. (2024). Investigation of persistent photoconductivity of gallium nitride semiconductor and differentiation of primary neural stem cells. Molecules, 29(18), 4439-. https://dx.doi.org/10.3390/molecules29184439 1420-3049 https://hdl.handle.net/10356/180471 10.3390/molecules29184439 39339434 2-s2.0-85205066887 18 29 4439 en Molecules © 2024 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https:// creativecommons.org/licenses/by/ 4.0/). application/pdf
spellingShingle Engineering
Neural stem cells
Semiconductor biointerface
Meng, Yu
Du, Xiaowei
Zhou, Shang
Li, Jiangting
Feng, Rongrong
Zhang, Huaiwei
Xu, Qianhui
Zhao, Weidong
Liu, Zheng
Zhong, Haijian
Investigation of persistent photoconductivity of gallium nitride semiconductor and differentiation of primary neural stem cells
title Investigation of persistent photoconductivity of gallium nitride semiconductor and differentiation of primary neural stem cells
title_full Investigation of persistent photoconductivity of gallium nitride semiconductor and differentiation of primary neural stem cells
title_fullStr Investigation of persistent photoconductivity of gallium nitride semiconductor and differentiation of primary neural stem cells
title_full_unstemmed Investigation of persistent photoconductivity of gallium nitride semiconductor and differentiation of primary neural stem cells
title_short Investigation of persistent photoconductivity of gallium nitride semiconductor and differentiation of primary neural stem cells
title_sort investigation of persistent photoconductivity of gallium nitride semiconductor and differentiation of primary neural stem cells
topic Engineering
Neural stem cells
Semiconductor biointerface
url https://hdl.handle.net/10356/180471
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