Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si

This work investigates the off-state leakage characteristics of AlN/GaN/AlGaN high electron mobility transistors (HEMTs) on Si substrate with varying mesa depths and uncovers the existence of a parasitic channel associated with the AlGaN back barrier. Significant differences in off-state leakage up...

Full description

Bibliographic Details
Main Authors: Liu, Siyu, Zhuang, Yihao, Li, Hanchao, Xie, Qingyun, Wang, Yue, Xie, Hanlin, Ranjan, Kumud, Ng, Geok Ing
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2024
Subjects:
Engineering
Physics
GaN HEMTs
2D-VRH
Online Access:https://hdl.handle.net/10356/180538

Internet

https://hdl.handle.net/10356/180538

Similar Items