GaAs/GeSn/Ge n-i-p diodes and light emitting diodes formed via grafting
Germanium-tin (GeSn) is a promising semiconductor material for future optoelectronic devices operating at the near-infrared to mid-infrared spectral range. In this work, we report the synthesis and characterization of a GaAs/GeSn-MQW/Ge n-i-p heterojunction created via grafting. The improved energy...
| Main Authors: | , , , , , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/181644 |
| _version_ | 1826121290845519872 |
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| author | Zhou, Jie Wang, Haibo Huang, Po Rei Xu, Shengqiang Liu, Yang Gong, Jiarui Shen, Jianping Vicent, Daniel Haessly, Samuel Abrand, Alireza Mohseni, Parsian K. Kim, Munho Yu, Shui-Qing Chang, Guo-En Gong, Xiao Ma, Zhenqiang |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zhou, Jie Wang, Haibo Huang, Po Rei Xu, Shengqiang Liu, Yang Gong, Jiarui Shen, Jianping Vicent, Daniel Haessly, Samuel Abrand, Alireza Mohseni, Parsian K. Kim, Munho Yu, Shui-Qing Chang, Guo-En Gong, Xiao Ma, Zhenqiang |
| author_sort | Zhou, Jie |
| collection | NTU |
| description | Germanium-tin (GeSn) is a promising semiconductor material for future optoelectronic devices operating at the near-infrared to mid-infrared spectral range. In this work, we report the synthesis and characterization of a GaAs/GeSn-MQW/Ge n-i-p heterojunction created via grafting. The improved energy barriers between GaAs and GeSn-MQW enable the diodes fabricated from the heterojunction to exhibit extraordinary rectification ratios (larger than 105) and record-low reverse-bias current density (∼10−6 A/cm2). The grafting-based LED performs as well as the epitaxially grown counterpart. The work may pave the way for future improvements of GeSn-based electronic devices. |
| first_indexed | 2025-03-09T12:56:13Z |
| format | Journal Article |
| id | ntu-10356/181644 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-03-09T12:56:13Z |
| publishDate | 2024 |
| record_format | dspace |
| spelling | ntu-10356/1816442024-12-13T15:42:22Z GaAs/GeSn/Ge n-i-p diodes and light emitting diodes formed via grafting Zhou, Jie Wang, Haibo Huang, Po Rei Xu, Shengqiang Liu, Yang Gong, Jiarui Shen, Jianping Vicent, Daniel Haessly, Samuel Abrand, Alireza Mohseni, Parsian K. Kim, Munho Yu, Shui-Qing Chang, Guo-En Gong, Xiao Ma, Zhenqiang School of Electrical and Electronic Engineering Engineering Epitaxially grown Germanium tins Germanium-tin (GeSn) is a promising semiconductor material for future optoelectronic devices operating at the near-infrared to mid-infrared spectral range. In this work, we report the synthesis and characterization of a GaAs/GeSn-MQW/Ge n-i-p heterojunction created via grafting. The improved energy barriers between GaAs and GeSn-MQW enable the diodes fabricated from the heterojunction to exhibit extraordinary rectification ratios (larger than 105) and record-low reverse-bias current density (∼10−6 A/cm2). The grafting-based LED performs as well as the epitaxially grown counterpart. The work may pave the way for future improvements of GeSn-based electronic devices. Published version The work is supported by AFOSR under Grant No. FA9550-19-1-0102. 2024-12-11T07:08:34Z 2024-12-11T07:08:34Z 2024 Journal Article Zhou, J., Wang, H., Huang, P. R., Xu, S., Liu, Y., Gong, J., Shen, J., Vicent, D., Haessly, S., Abrand, A., Mohseni, P. K., Kim, M., Yu, S., Chang, G., Gong, X. & Ma, Z. (2024). GaAs/GeSn/Ge n-i-p diodes and light emitting diodes formed via grafting. Journal of Vacuum Science and Technology B, 42(4), 042213-. https://dx.doi.org/10.1116/6.0003619 2166-2746 https://hdl.handle.net/10356/181644 10.1116/6.0003619 2-s2.0-85199355530 4 42 042213 en Journal of Vacuum Science and Technology B © 2024 Author(s). Published under an exclusive license by the AVS. This article may be downloaded for personal use only. Any other use requires prior permission of the copyright holder. The Version of Record is available online at http://doi.org/10.1116/6.0003619 application/pdf |
| spellingShingle | Engineering Epitaxially grown Germanium tins Zhou, Jie Wang, Haibo Huang, Po Rei Xu, Shengqiang Liu, Yang Gong, Jiarui Shen, Jianping Vicent, Daniel Haessly, Samuel Abrand, Alireza Mohseni, Parsian K. Kim, Munho Yu, Shui-Qing Chang, Guo-En Gong, Xiao Ma, Zhenqiang GaAs/GeSn/Ge n-i-p diodes and light emitting diodes formed via grafting |
| title | GaAs/GeSn/Ge n-i-p diodes and light emitting diodes formed via grafting |
| title_full | GaAs/GeSn/Ge n-i-p diodes and light emitting diodes formed via grafting |
| title_fullStr | GaAs/GeSn/Ge n-i-p diodes and light emitting diodes formed via grafting |
| title_full_unstemmed | GaAs/GeSn/Ge n-i-p diodes and light emitting diodes formed via grafting |
| title_short | GaAs/GeSn/Ge n-i-p diodes and light emitting diodes formed via grafting |
| title_sort | gaas gesn ge n i p diodes and light emitting diodes formed via grafting |
| topic | Engineering Epitaxially grown Germanium tins |
| url | https://hdl.handle.net/10356/181644 |
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