AlN/GaN/AlGaN-on-Si HEMT achieving 1.3 W/mm at 5 v for 5G FR2 handsets
This Letter reports a double heterostructure (DH) AlN/GaN/AlGaN-on-Si HEMT, which has been proposed, for low voltage (LV, ≤5 V) RF operation. The proposed transistor shows excellent DC (Idmax = 1.9 A/mm, gmmax = 0.66 S/mm) and RF small-signal characteristics (fT/fmax = 145/195 GHz). Continuous-wave...
| Main Authors: | , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
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2025
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| Online Access: | https://hdl.handle.net/10356/182292 |
| _version_ | 1826127646080106496 |
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| author | Li, Hanchao Xie, Hanlin Xie, Qingyun Liu, Siyu Wang, Yue Wang, Yuxuan Ranjan, Kumud Zhuang, Yihao Gong, Xiao Ng, Geok Ing |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Li, Hanchao Xie, Hanlin Xie, Qingyun Liu, Siyu Wang, Yue Wang, Yuxuan Ranjan, Kumud Zhuang, Yihao Gong, Xiao Ng, Geok Ing |
| author_sort | Li, Hanchao |
| collection | NTU |
| description | This Letter reports a double heterostructure (DH) AlN/GaN/AlGaN-on-Si HEMT, which has been proposed, for low voltage (LV, ≤5 V) RF operation. The proposed transistor shows excellent DC (Idmax = 1.9 A/mm, gmmax = 0.66 S/mm) and RF small-signal characteristics (fT/fmax = 145/195 GHz). Continuous-wave (CW) load-pull measurements at 30 GHz yield Psat of 0.6 (1.3) W/mm at Vds of 3.5 (5) V, and peak power-added efficiency (PAE) of 43% (42%). To the best of the authors' knowledge, the Psat values are the highest reported for LV GaN-on-Si HEMTs in 5G FR2, despite the use of conventional alloyed contacts and a gate length (Lg) of 120 nm. Furthermore, among published LV GaN-on-Si HEMTs, the proposed transistor achieves a desired combination of saturation velocity (Vsat) and knee voltage (Vknee), which are critical factors for LV power amplification. The results reflect the promising potential of the proposed heterostructure to achieve high transmit power in 5G FR2 handsets.. |
| first_indexed | 2025-03-09T14:37:14Z |
| format | Journal Article |
| id | ntu-10356/182292 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-03-09T14:37:14Z |
| publishDate | 2025 |
| record_format | dspace |
| spelling | ntu-10356/1822922025-01-21T00:39:40Z AlN/GaN/AlGaN-on-Si HEMT achieving 1.3 W/mm at 5 v for 5G FR2 handsets Li, Hanchao Xie, Hanlin Xie, Qingyun Liu, Siyu Wang, Yue Wang, Yuxuan Ranjan, Kumud Zhuang, Yihao Gong, Xiao Ng, Geok Ing School of Electrical and Electronic Engineering National GaN Technology Centre, A*STAR Institute of Microelectronics, A*STAR Singapore-MIT Alliance for Research and Technology Energy Research Institute @ NTU (ERI@N) Engineering Double heterostructure HEMTs Low voltage application This Letter reports a double heterostructure (DH) AlN/GaN/AlGaN-on-Si HEMT, which has been proposed, for low voltage (LV, ≤5 V) RF operation. The proposed transistor shows excellent DC (Idmax = 1.9 A/mm, gmmax = 0.66 S/mm) and RF small-signal characteristics (fT/fmax = 145/195 GHz). Continuous-wave (CW) load-pull measurements at 30 GHz yield Psat of 0.6 (1.3) W/mm at Vds of 3.5 (5) V, and peak power-added efficiency (PAE) of 43% (42%). To the best of the authors' knowledge, the Psat values are the highest reported for LV GaN-on-Si HEMTs in 5G FR2, despite the use of conventional alloyed contacts and a gate length (Lg) of 120 nm. Furthermore, among published LV GaN-on-Si HEMTs, the proposed transistor achieves a desired combination of saturation velocity (Vsat) and knee voltage (Vknee), which are critical factors for LV power amplification. The results reflect the promising potential of the proposed heterostructure to achieve high transmit power in 5G FR2 handsets.. Agency for Science, Technology and Research (A*STAR) National Research Foundation (NRF) This work was supported in part by the Agency for Science, Technology and Research (A*STAR) through Research, Innovation and Enterprise 2025 (RIE2025) Manufacturing, Trade and Connectivity (MTC) under Award M21K6b0134 and in part by the National Research Foundation (NRF)/A*STAR through RIE2025 MTC under Grant M23WSNG001. 2025-01-21T00:39:40Z 2025-01-21T00:39:40Z 2024 Journal Article Li, H., Xie, H., Xie, Q., Liu, S., Wang, Y., Wang, Y., Ranjan, K., Zhuang, Y., Gong, X. & Ng, G. I. (2024). AlN/GaN/AlGaN-on-Si HEMT achieving 1.3 W/mm at 5 v for 5G FR2 handsets. IEEE Electron Device Letters, 45(12), 2315-2318. https://dx.doi.org/10.1109/LED.2024.3483888 0741-3106 https://hdl.handle.net/10356/182292 10.1109/LED.2024.3483888 2-s2.0-85207927263 12 45 2315 2318 en M21K6b0134 M23WSNG001 IEEE Electron Device Letters © 2024 IEEE. All rights reserved. |
| spellingShingle | Engineering Double heterostructure HEMTs Low voltage application Li, Hanchao Xie, Hanlin Xie, Qingyun Liu, Siyu Wang, Yue Wang, Yuxuan Ranjan, Kumud Zhuang, Yihao Gong, Xiao Ng, Geok Ing AlN/GaN/AlGaN-on-Si HEMT achieving 1.3 W/mm at 5 v for 5G FR2 handsets |
| title | AlN/GaN/AlGaN-on-Si HEMT achieving 1.3 W/mm at 5 v for 5G FR2 handsets |
| title_full | AlN/GaN/AlGaN-on-Si HEMT achieving 1.3 W/mm at 5 v for 5G FR2 handsets |
| title_fullStr | AlN/GaN/AlGaN-on-Si HEMT achieving 1.3 W/mm at 5 v for 5G FR2 handsets |
| title_full_unstemmed | AlN/GaN/AlGaN-on-Si HEMT achieving 1.3 W/mm at 5 v for 5G FR2 handsets |
| title_short | AlN/GaN/AlGaN-on-Si HEMT achieving 1.3 W/mm at 5 v for 5G FR2 handsets |
| title_sort | aln gan algan on si hemt achieving 1 3 w mm at 5 v for 5g fr2 handsets |
| topic | Engineering Double heterostructure HEMTs Low voltage application |
| url | https://hdl.handle.net/10356/182292 |
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