Development of process technology for fabrication of 4H-SiC silicon carbide schottky barrier diodes
In recent times, 4H-SiC has been at the center of power semiconductor device research due to its superior material properties such as large bandgap (Eg ~3.26 eV), high breakdown electric field (Ec ~3 MV/cm which is almost 10 times that of Si), high saturated electron velocity (~2.0×107 cm/s which is...
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| Format: | Thesis |
| Language: | English |
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2009
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| Online Access: | https://hdl.handle.net/10356/19273 |
| _version_ | 1811695106748579840 |
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| author | Kumta Amit Sudhakar |
| author2 | Rusli |
| author_facet | Rusli Kumta Amit Sudhakar |
| author_sort | Kumta Amit Sudhakar |
| collection | NTU |
| description | In recent times, 4H-SiC has been at the center of power semiconductor device research due to its superior material properties such as large bandgap (Eg ~3.26 eV), high breakdown electric field (Ec ~3 MV/cm which is almost 10 times that of Si), high saturated electron velocity (~2.0×107 cm/s which is almost 2 times that in Si), high thermal conductivity (K ~4.9 W/cm.K) and most importantly ability to form a stable native oxide SiO2. Schottky barrier diodes (SBDs) based on 4H-SiC offer superior dynamic performance (<20 nC reverse recovery charge for a 1200 V, 1A SBD), almost 100 times lower specific-on resistance compared to Si SBDs and PiN diodes. The higher bandgap results in much higher schottky barrier height compared to Si and GaAs resulting in extremely low leakage currents even at elevated temperatures (>300oC operation). |
| first_indexed | 2024-10-01T07:18:12Z |
| format | Thesis |
| id | ntu-10356/19273 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:18:12Z |
| publishDate | 2009 |
| record_format | dspace |
| spelling | ntu-10356/192732023-07-04T17:02:24Z Development of process technology for fabrication of 4H-SiC silicon carbide schottky barrier diodes Kumta Amit Sudhakar Rusli School of Electrical and Electronic Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials In recent times, 4H-SiC has been at the center of power semiconductor device research due to its superior material properties such as large bandgap (Eg ~3.26 eV), high breakdown electric field (Ec ~3 MV/cm which is almost 10 times that of Si), high saturated electron velocity (~2.0×107 cm/s which is almost 2 times that in Si), high thermal conductivity (K ~4.9 W/cm.K) and most importantly ability to form a stable native oxide SiO2. Schottky barrier diodes (SBDs) based on 4H-SiC offer superior dynamic performance (<20 nC reverse recovery charge for a 1200 V, 1A SBD), almost 100 times lower specific-on resistance compared to Si SBDs and PiN diodes. The higher bandgap results in much higher schottky barrier height compared to Si and GaAs resulting in extremely low leakage currents even at elevated temperatures (>300oC operation). DOCTOR OF PHILOSOPHY (EEE) 2009-11-16T05:57:29Z 2009-11-16T05:57:29Z 2009 2009 Thesis Kumta Amit Sudhakar. (2009). Development of process technology for fabrication of 4H-SiC silicon carbide schottky barrier diodes. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/19273 10.32657/10356/19273 en 193 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials Kumta Amit Sudhakar Development of process technology for fabrication of 4H-SiC silicon carbide schottky barrier diodes |
| title | Development of process technology for fabrication of 4H-SiC silicon carbide schottky barrier diodes |
| title_full | Development of process technology for fabrication of 4H-SiC silicon carbide schottky barrier diodes |
| title_fullStr | Development of process technology for fabrication of 4H-SiC silicon carbide schottky barrier diodes |
| title_full_unstemmed | Development of process technology for fabrication of 4H-SiC silicon carbide schottky barrier diodes |
| title_short | Development of process technology for fabrication of 4H-SiC silicon carbide schottky barrier diodes |
| title_sort | development of process technology for fabrication of 4h sic silicon carbide schottky barrier diodes |
| topic | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials |
| url | https://hdl.handle.net/10356/19273 |
| work_keys_str_mv | AT kumtaamitsudhakar developmentofprocesstechnologyforfabricationof4hsicsiliconcarbideschottkybarrierdiodes |