Growth, fabrication and characterisation of GaAs and InP-based HEMT structures
This thesis presents the material growth, device fabrication and characterisation of GaAs-based pseudomorphic HEMTs. InP-based HEMT device fabrication process and device characterisation is also included. MBE growth parameter optimisation was carried out, mainly on the influence of V/III flux rati...
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| Other Authors: | |
| Format: | Thesis |
| Language: | English |
| Published: |
2009
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| Online Access: | http://hdl.handle.net/10356/19601 |
| _version_ | 1811680810666819584 |
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| author | Zheng, Hai Qun. |
| author2 | K Radhakrishnan |
| author_facet | K Radhakrishnan Zheng, Hai Qun. |
| author_sort | Zheng, Hai Qun. |
| collection | NTU |
| description | This thesis presents the material growth, device fabrication and characterisation of GaAs-based pseudomorphic HEMTs. InP-based HEMT device fabrication process and device characterisation is also included.
MBE growth parameter optimisation was carried out, mainly on the influence of V/III
flux ratio, substrate temperature and growth interruptions. It was found that using lower
As flux, lower substrate temperature during 8-doping and proper growth interruption
before and after the channel layer will result in better material quality in terms of higher
2DEG mobility. Conventional 8-doped P-HEMT samples were successfully grown with
the mobility of 5860 cm2/v.s at a 2DEG concentration of 2.28 x 10'2cm-2. |
| first_indexed | 2024-10-01T03:30:58Z |
| format | Thesis |
| id | ntu-10356/19601 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:30:58Z |
| publishDate | 2009 |
| record_format | dspace |
| spelling | ntu-10356/196012023-07-04T15:02:10Z Growth, fabrication and characterisation of GaAs and InP-based HEMT structures Zheng, Hai Qun. K Radhakrishnan School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials This thesis presents the material growth, device fabrication and characterisation of GaAs-based pseudomorphic HEMTs. InP-based HEMT device fabrication process and device characterisation is also included. MBE growth parameter optimisation was carried out, mainly on the influence of V/III flux ratio, substrate temperature and growth interruptions. It was found that using lower As flux, lower substrate temperature during 8-doping and proper growth interruption before and after the channel layer will result in better material quality in terms of higher 2DEG mobility. Conventional 8-doped P-HEMT samples were successfully grown with the mobility of 5860 cm2/v.s at a 2DEG concentration of 2.28 x 10'2cm-2. Master of Engineering 2009-12-14T06:17:32Z 2009-12-14T06:17:32Z 1997 1997 Thesis http://hdl.handle.net/10356/19601 en NANYANG TECHNOLOGICAL UNIVERSITY 120 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials Zheng, Hai Qun. Growth, fabrication and characterisation of GaAs and InP-based HEMT structures |
| title | Growth, fabrication and characterisation of GaAs and InP-based HEMT structures |
| title_full | Growth, fabrication and characterisation of GaAs and InP-based HEMT structures |
| title_fullStr | Growth, fabrication and characterisation of GaAs and InP-based HEMT structures |
| title_full_unstemmed | Growth, fabrication and characterisation of GaAs and InP-based HEMT structures |
| title_short | Growth, fabrication and characterisation of GaAs and InP-based HEMT structures |
| title_sort | growth fabrication and characterisation of gaas and inp based hemt structures |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials |
| url | http://hdl.handle.net/10356/19601 |
| work_keys_str_mv | AT zhenghaiqun growthfabricationandcharacterisationofgaasandinpbasedhemtstructures |