Growth, fabrication and characterisation of GaAs and InP-based HEMT structures
This thesis presents the material growth, device fabrication and characterisation of GaAs-based pseudomorphic HEMTs. InP-based HEMT device fabrication process and device characterisation is also included. MBE growth parameter optimisation was carried out, mainly on the influence of V/III flux rati...
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| Format: | Thesis |
| Language: | English |
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2009
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| Online Access: | http://hdl.handle.net/10356/19601 |