Fabrication and characterization of AlGaAs/InGaAs-based pseudomorphic high electron mobility transistors (pHEMTs)
This work demonstrates the fabrication and operation of several types of pseudomorphic high electron mobility transistors (pHEMTs) and heterostructure field effect transistors (HFETs), which were our initial effort in gallium arsenide (GaAs) device fabrication. The aim of this work is to develop a r...
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| Format: | Thesis |
| Language: | English |
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2009
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| Online Access: | http://hdl.handle.net/10356/19634 |