Size, composition and thermal induced band gap changing of nanostructured semiconductors
A nanostructure semiconductor can be divided into three groups such as group-IV from elemental, III-V and II-VI from compound materials. The band gap energy changes effectively if a function of temperature changes because the crystal lattice expansion and the inter-atomic bonds are weakened. A weake...
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| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
2010
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| Online Access: | http://hdl.handle.net/10356/20749 |