Study of dilute nitride based structures for infrared photodetection
Dilute nitride III-V compound semiconductor materials have attracted considerable interests in recent years owing to the unique nitrogen-driving physics that are attributed to the highly localized nature of perturbations induced by nitrogen (N) band. Most research activities were about interband tra...
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| Other Authors: | |
| Format: | Thesis |
| Language: | English |
| Published: |
2010
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| Online Access: | https://hdl.handle.net/10356/20825 |
| _version_ | 1826110450104795136 |
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| author | Liu, Wei |
| author2 | Zhang Dao Hua |
| author_facet | Zhang Dao Hua Liu, Wei |
| author_sort | Liu, Wei |
| collection | NTU |
| description | Dilute nitride III-V compound semiconductor materials have attracted considerable interests in recent years owing to the unique nitrogen-driving physics that are attributed to the highly localized nature of perturbations induced by nitrogen (N) band. Most research activities were about interband transition physics and applications. However, limited research work has been done for dilute-N related intersubband transition (ISBT) physics. In this thesis work, the ISBT properties in various dilute-N quantum wells (QWs) have been investigated using modified multi-band k.p models systematically. The growth and characterization of n-type InGaAsN/GaAs QWs for 8–12 µm infrared absorption are also reported. In Addition, studies on InSb1-xNx alloys with extended infrared detection ability to the long-wavelength infrared window are presented. A theoretical method based on eight- and fourteen-band k.p Hamiltonians in combination with envelope-function Fourier expansions has been developed to study ISBTs in N-free QWs. Then the ten- and sixteen-band k.p models taking the high-lying N resonant bands into consideration were developed to study ISBTs in various dilute-N QWs. The complete momentum matrix elements are derived. The ISBT selectivities on subband order, wave vector and well width in finitely deep QWs are concluded. |
| first_indexed | 2024-10-01T02:34:18Z |
| format | Thesis |
| id | ntu-10356/20825 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:34:18Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/208252023-07-04T16:52:28Z Study of dilute nitride based structures for infrared photodetection Liu, Wei Zhang Dao Hua School of Electrical and Electronic Engineering Microelectronics Centre DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Dilute nitride III-V compound semiconductor materials have attracted considerable interests in recent years owing to the unique nitrogen-driving physics that are attributed to the highly localized nature of perturbations induced by nitrogen (N) band. Most research activities were about interband transition physics and applications. However, limited research work has been done for dilute-N related intersubband transition (ISBT) physics. In this thesis work, the ISBT properties in various dilute-N quantum wells (QWs) have been investigated using modified multi-band k.p models systematically. The growth and characterization of n-type InGaAsN/GaAs QWs for 8–12 µm infrared absorption are also reported. In Addition, studies on InSb1-xNx alloys with extended infrared detection ability to the long-wavelength infrared window are presented. A theoretical method based on eight- and fourteen-band k.p Hamiltonians in combination with envelope-function Fourier expansions has been developed to study ISBTs in N-free QWs. Then the ten- and sixteen-band k.p models taking the high-lying N resonant bands into consideration were developed to study ISBTs in various dilute-N QWs. The complete momentum matrix elements are derived. The ISBT selectivities on subband order, wave vector and well width in finitely deep QWs are concluded. DOCTOR OF PHILOSOPHY (EEE) 2010-01-15T06:14:43Z 2010-01-15T06:14:43Z 2009 2009 Thesis Liu, W. (2009). Study of dilute nitride based structures for infrared photodetection. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/20825 10.32657/10356/20825 en 218 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Liu, Wei Study of dilute nitride based structures for infrared photodetection |
| title | Study of dilute nitride based structures for infrared photodetection |
| title_full | Study of dilute nitride based structures for infrared photodetection |
| title_fullStr | Study of dilute nitride based structures for infrared photodetection |
| title_full_unstemmed | Study of dilute nitride based structures for infrared photodetection |
| title_short | Study of dilute nitride based structures for infrared photodetection |
| title_sort | study of dilute nitride based structures for infrared photodetection |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics |
| url | https://hdl.handle.net/10356/20825 |
| work_keys_str_mv | AT liuwei studyofdilutenitridebasedstructuresforinfraredphotodetection |