Study of dilute nitride based structures for infrared photodetection
Dilute nitride III-V compound semiconductor materials have attracted considerable interests in recent years owing to the unique nitrogen-driving physics that are attributed to the highly localized nature of perturbations induced by nitrogen (N) band. Most research activities were about interband tra...
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| Format: | Thesis |
| Language: | English |
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2010
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| Online Access: | https://hdl.handle.net/10356/20825 |