Fabrication and characterisation of microelectronic devices, circuits and systems III
We present in this report the characterization of deep submicrometer (the device channel length ranges from 0.25um to 1.0um) lightly-doped drain (LDD) pMOSFETs operating in a Bi-MOS structure. The Bi-MOS structure is essentially a device operating with its sourcebody junction forward biased. Cons...
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| 格式: | Research Report |
| 出版: |
2008
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| 在线阅读: | http://hdl.handle.net/10356/2754 |
| _version_ | 1826114906250805248 |
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| author | Siek, Liter. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Siek, Liter. |
| author_sort | Siek, Liter. |
| collection | NTU |
| description | We present in this report the characterization of deep submicrometer (the device channel length ranges from 0.25um to 1.0um) lightly-doped drain (LDD) pMOSFETs operating in a Bi-MOS structure. The Bi-MOS structure is essentially a device operating with its sourcebody junction forward biased. Consequently, there is an additional current component, the lateral bipolar current, flwoing beneath the principle MOS current. |
| first_indexed | 2024-10-01T03:46:50Z |
| format | Research Report |
| id | ntu-10356/2754 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T03:46:50Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/27542023-03-04T03:20:35Z Fabrication and characterisation of microelectronic devices, circuits and systems III Siek, Liter. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics We present in this report the characterization of deep submicrometer (the device channel length ranges from 0.25um to 1.0um) lightly-doped drain (LDD) pMOSFETs operating in a Bi-MOS structure. The Bi-MOS structure is essentially a device operating with its sourcebody junction forward biased. Consequently, there is an additional current component, the lateral bipolar current, flwoing beneath the principle MOS current. RGM 17/99 2008-09-17T09:14:17Z 2008-09-17T09:14:17Z 2001 2001 Research Report http://hdl.handle.net/10356/2754 Nanyang Technological University application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Siek, Liter. Fabrication and characterisation of microelectronic devices, circuits and systems III |
| title | Fabrication and characterisation of microelectronic devices, circuits and systems III |
| title_full | Fabrication and characterisation of microelectronic devices, circuits and systems III |
| title_fullStr | Fabrication and characterisation of microelectronic devices, circuits and systems III |
| title_full_unstemmed | Fabrication and characterisation of microelectronic devices, circuits and systems III |
| title_short | Fabrication and characterisation of microelectronic devices, circuits and systems III |
| title_sort | fabrication and characterisation of microelectronic devices circuits and systems iii |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics |
| url | http://hdl.handle.net/10356/2754 |
| work_keys_str_mv | AT siekliter fabricationandcharacterisationofmicroelectronicdevicescircuitsandsystemsiii |