Characterization of compound semiconductor for quantum well infrared photodetectors
In this project, quaternary GaInAsP materials grown on GaAs and InP substrates are systematically characterized. GaInAs/A1GaAs and GaInAsP/InP multuple quantum well structures grown on GaAs and on InP substrates, respectively, are investigated. Quantum well infrared photodector devices made up of th...
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| Format: | Research Report |
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2008
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| Online Access: | http://hdl.handle.net/10356/2826 |
| _version_ | 1811688355547578368 |
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| author | Zhang, Dao Hua |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zhang, Dao Hua |
| author_sort | Zhang, Dao Hua |
| collection | NTU |
| description | In this project, quaternary GaInAsP materials grown on GaAs and InP substrates are systematically characterized. GaInAs/A1GaAs and GaInAsP/InP multuple quantum well structures grown on GaAs and on InP substrates, respectively, are investigated. Quantum well infrared photodector devices made up of these two kinds are fabricated. |
| first_indexed | 2024-10-01T05:30:54Z |
| format | Research Report |
| id | ntu-10356/2826 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T05:30:54Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/28262023-03-04T03:22:19Z Characterization of compound semiconductor for quantum well infrared photodetectors Zhang, Dao Hua School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors In this project, quaternary GaInAsP materials grown on GaAs and InP substrates are systematically characterized. GaInAs/A1GaAs and GaInAsP/InP multuple quantum well structures grown on GaAs and on InP substrates, respectively, are investigated. Quantum well infrared photodector devices made up of these two kinds are fabricated. RG 27/98 2008-09-17T09:15:16Z 2008-09-17T09:15:16Z 2002 2002 Research Report http://hdl.handle.net/10356/2826 Nanyang Technological University application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Zhang, Dao Hua Characterization of compound semiconductor for quantum well infrared photodetectors |
| title | Characterization of compound semiconductor for quantum well infrared photodetectors |
| title_full | Characterization of compound semiconductor for quantum well infrared photodetectors |
| title_fullStr | Characterization of compound semiconductor for quantum well infrared photodetectors |
| title_full_unstemmed | Characterization of compound semiconductor for quantum well infrared photodetectors |
| title_short | Characterization of compound semiconductor for quantum well infrared photodetectors |
| title_sort | characterization of compound semiconductor for quantum well infrared photodetectors |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors |
| url | http://hdl.handle.net/10356/2826 |
| work_keys_str_mv | AT zhangdaohua characterizationofcompoundsemiconductorforquantumwellinfraredphotodetectors |