RF modelling of semiconductor devices
This report focuses on the approaches to characterize the deep submicron-meter MOSFETs operating both in DC and in high frequency region with different dimensions.
| Main Authors: | , , |
|---|---|
| Other Authors: | |
| Format: | Research Report |
| Published: |
2008
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/2868 |