Wideband CDMA power amplifier
This report discusses the design and development of High Power (10W) RF amplifier for emerging Wide-band CDMA (WCDMA) applications. Our design is based on the latest Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor MRF 282, from Motorola. In this report, we discuss the device selectio...
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| Format: | Thesis |
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2008
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| Online Access: | http://hdl.handle.net/10356/3202 |
| _version_ | 1824456886456418304 |
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| author | Sathish Shanbhag Kota |
| author2 | Law, Choi Look |
| author_facet | Law, Choi Look Sathish Shanbhag Kota |
| author_sort | Sathish Shanbhag Kota |
| collection | NTU |
| description | This report discusses the design and development of High Power (10W) RF amplifier for emerging Wide-band CDMA (WCDMA) applications. Our design is based on the latest Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor MRF 282, from Motorola. In this report, we discuss the device selection criteria, the actual design of the amplifier circuit and it's simulation using HP EESof LIBRA™. We also discuss the fabrication techniques for the amplifier. Following this, we discuss the test setup, procedures and the results obtained from our amplifier. We finally conclude our discussion with some recommendations for future work in this field. |
| first_indexed | 2025-02-19T04:01:13Z |
| format | Thesis |
| id | ntu-10356/3202 |
| institution | Nanyang Technological University |
| last_indexed | 2025-02-19T04:01:13Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/32022023-07-04T15:09:49Z Wideband CDMA power amplifier Sathish Shanbhag Kota Law, Choi Look School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits This report discusses the design and development of High Power (10W) RF amplifier for emerging Wide-band CDMA (WCDMA) applications. Our design is based on the latest Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor MRF 282, from Motorola. In this report, we discuss the device selection criteria, the actual design of the amplifier circuit and it's simulation using HP EESof LIBRA™. We also discuss the fabrication techniques for the amplifier. Following this, we discuss the test setup, procedures and the results obtained from our amplifier. We finally conclude our discussion with some recommendations for future work in this field. Master of Science (Communication and Network Systems) 2008-09-17T09:24:31Z 2008-09-17T09:24:31Z 2000 2000 Thesis http://hdl.handle.net/10356/3202 Nanyang Technological University application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Sathish Shanbhag Kota Wideband CDMA power amplifier |
| title | Wideband CDMA power amplifier |
| title_full | Wideband CDMA power amplifier |
| title_fullStr | Wideband CDMA power amplifier |
| title_full_unstemmed | Wideband CDMA power amplifier |
| title_short | Wideband CDMA power amplifier |
| title_sort | wideband cdma power amplifier |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits |
| url | http://hdl.handle.net/10356/3202 |
| work_keys_str_mv | AT sathishshanbhagkota widebandcdmapoweramplifier |