Low dimensional semiconductor structures MOCVD growth and their characterizations
This project is on low dimensional semiconductor structures MOCVD growth and their characterizations, mainly focused on multiple quantum wells structure growth by MOCVD. Samples were characterized by using high resolution X-ray diffractions (XRD) and photoluminescence (PL). In this dissertation, pro...
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| Format: | Thesis |
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2008
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| Online Access: | http://hdl.handle.net/10356/3278 |
| _version_ | 1826114429515726848 |
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| author | Song, Yi Fei. |
| author2 | Tang, Xiaohong |
| author_facet | Tang, Xiaohong Song, Yi Fei. |
| author_sort | Song, Yi Fei. |
| collection | NTU |
| description | This project is on low dimensional semiconductor structures MOCVD growth and their characterizations, mainly focused on multiple quantum wells structure growth by MOCVD. Samples were characterized by using high resolution X-ray diffractions (XRD) and photoluminescence (PL). In this dissertation, properties of low dimensional semiconductor quantum well structures have been discussed. The principle of MOCVD growth in terms of its growth process, mechanism, the starting precursors and growth system has been described. Experiment setup and the application of XRD and PL used in this project have been introduced. |
| first_indexed | 2024-10-01T03:39:20Z |
| format | Thesis |
| id | ntu-10356/3278 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T03:39:20Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/32782023-07-04T15:52:31Z Low dimensional semiconductor structures MOCVD growth and their characterizations Song, Yi Fei. Tang, Xiaohong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors This project is on low dimensional semiconductor structures MOCVD growth and their characterizations, mainly focused on multiple quantum wells structure growth by MOCVD. Samples were characterized by using high resolution X-ray diffractions (XRD) and photoluminescence (PL). In this dissertation, properties of low dimensional semiconductor quantum well structures have been discussed. The principle of MOCVD growth in terms of its growth process, mechanism, the starting precursors and growth system has been described. Experiment setup and the application of XRD and PL used in this project have been introduced. Master of Science (Photonics) 2008-09-17T09:26:15Z 2008-09-17T09:26:15Z 2005 2005 Thesis http://hdl.handle.net/10356/3278 Nanyang Technological University application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Song, Yi Fei. Low dimensional semiconductor structures MOCVD growth and their characterizations |
| title | Low dimensional semiconductor structures MOCVD growth and their characterizations |
| title_full | Low dimensional semiconductor structures MOCVD growth and their characterizations |
| title_fullStr | Low dimensional semiconductor structures MOCVD growth and their characterizations |
| title_full_unstemmed | Low dimensional semiconductor structures MOCVD growth and their characterizations |
| title_short | Low dimensional semiconductor structures MOCVD growth and their characterizations |
| title_sort | low dimensional semiconductor structures mocvd growth and their characterizations |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors |
| url | http://hdl.handle.net/10356/3278 |
| work_keys_str_mv | AT songyifei lowdimensionalsemiconductorstructuresmocvdgrowthandtheircharacterizations |