Effect of surface treatments on Cu/Ultra-low k interconnection technology
Single damascene copper interconnect structures were fabricated. Cu/ultra-low-k (porous SiLKTM) interconnects were subjected to surface treatments to study the effects on the structural and electrical properties, including Fourier transform infrared spectroscopy, atomic force microscopy and electr...
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| Materialtyp: | Lärdomsprov |
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2008
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| Länkar: | http://hdl.handle.net/10356/3363 |