Properties of amorphous Si-carbon alloy film deposited by FCVA technique
Amorphous silicon-carbon alloy (a-Sii-xCx) has attracted much attention not only due to the composition dependent variability of their optical band gap but also because of their important roles as intermediate layer for the growth of diamond film on crystalline silicon and non-diamond substrates. [1...
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| Format: | Thesis |
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2008
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| Online Access: | http://hdl.handle.net/10356/3399 |
| _version_ | 1811694087030439936 |
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| author | Tan, Wee Ming |
| author2 | Tay, Beng Kang |
| author_facet | Tay, Beng Kang Tan, Wee Ming |
| author_sort | Tan, Wee Ming |
| collection | NTU |
| description | Amorphous silicon-carbon alloy (a-Sii-xCx) has attracted much attention not only due to the composition dependent variability of their optical band gap but also because of their important roles as intermediate layer for the growth of diamond film on crystalline silicon and non-diamond substrates. [1] |
| first_indexed | 2024-10-01T07:01:59Z |
| format | Thesis |
| id | ntu-10356/3399 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T07:01:59Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/33992023-07-04T15:18:50Z Properties of amorphous Si-carbon alloy film deposited by FCVA technique Tan, Wee Ming Tay, Beng Kang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials Amorphous silicon-carbon alloy (a-Sii-xCx) has attracted much attention not only due to the composition dependent variability of their optical band gap but also because of their important roles as intermediate layer for the growth of diamond film on crystalline silicon and non-diamond substrates. [1] Master of Science (Microelectronics) 2008-09-17T09:29:19Z 2008-09-17T09:29:19Z 2003 2003 Thesis http://hdl.handle.net/10356/3399 Nanyang Technological University application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials Tan, Wee Ming Properties of amorphous Si-carbon alloy film deposited by FCVA technique |
| title | Properties of amorphous Si-carbon alloy film deposited by FCVA technique |
| title_full | Properties of amorphous Si-carbon alloy film deposited by FCVA technique |
| title_fullStr | Properties of amorphous Si-carbon alloy film deposited by FCVA technique |
| title_full_unstemmed | Properties of amorphous Si-carbon alloy film deposited by FCVA technique |
| title_short | Properties of amorphous Si-carbon alloy film deposited by FCVA technique |
| title_sort | properties of amorphous si carbon alloy film deposited by fcva technique |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials |
| url | http://hdl.handle.net/10356/3399 |
| work_keys_str_mv | AT tanweeming propertiesofamorphoussicarbonalloyfilmdepositedbyfcvatechnique |