Band structures and optical properties of InGaNAs quantum wells
This thesis presents theoretical studies of electronic band structures and optical properties for compressively strained InGaAsN/GaAs quantum well (QW). We have used a realistic 10-band k.p model for the detailed calculation of band structures and have even studied the QW structure with tensile GaAs...
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| Format: | Thesis |
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2008
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| Online Access: | https://hdl.handle.net/10356/3436 |
| _version_ | 1811682154146430976 |
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| author | Ng, Say Tyam |
| author2 | Fan, Weijun |
| author_facet | Fan, Weijun Ng, Say Tyam |
| author_sort | Ng, Say Tyam |
| collection | NTU |
| description | This thesis presents theoretical studies of electronic band structures and optical properties for compressively strained InGaAsN/GaAs quantum well (QW). We have used a realistic 10-band k.p model for the detailed calculation of band structures and have even studied the QW structure with tensile GaAs/GaAsP/GaAs compounded barrier. Strained conduction band offset ratio (Qc) of InGaAsN/GaAs was proposed. Together with band gap energy (EG) and electron effective mass (m*) based on band-anticrossing (BAC) model, we are able to predict quantum well transition energies that is reasonably close to the reported experimental values. Model-dependent prediction of transition energy (Eeh) and energy separation of conduction subbands were also conducted using additional 8-band and 6-band k.p models, which neglect nitrogen related energy level (EN) and conduction-valence band interaction, respectively. |
| first_indexed | 2024-10-01T03:52:19Z |
| format | Thesis |
| id | ntu-10356/3436 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T03:52:19Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/34362023-07-04T17:29:09Z Band structures and optical properties of InGaNAs quantum wells Ng, Say Tyam Fan, Weijun School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics This thesis presents theoretical studies of electronic band structures and optical properties for compressively strained InGaAsN/GaAs quantum well (QW). We have used a realistic 10-band k.p model for the detailed calculation of band structures and have even studied the QW structure with tensile GaAs/GaAsP/GaAs compounded barrier. Strained conduction band offset ratio (Qc) of InGaAsN/GaAs was proposed. Together with band gap energy (EG) and electron effective mass (m*) based on band-anticrossing (BAC) model, we are able to predict quantum well transition energies that is reasonably close to the reported experimental values. Model-dependent prediction of transition energy (Eeh) and energy separation of conduction subbands were also conducted using additional 8-band and 6-band k.p models, which neglect nitrogen related energy level (EN) and conduction-valence band interaction, respectively. DOCTOR OF PHILOSOPHY (EEE) 2008-09-17T09:30:10Z 2008-09-17T09:30:10Z 2007 2007 Thesis Ng, S. T. (2007). Band structures and optical properties of InGaNAs quantum wells. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/3436 10.32657/10356/3436 Nanyang Technological University application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Ng, Say Tyam Band structures and optical properties of InGaNAs quantum wells |
| title | Band structures and optical properties of InGaNAs quantum wells |
| title_full | Band structures and optical properties of InGaNAs quantum wells |
| title_fullStr | Band structures and optical properties of InGaNAs quantum wells |
| title_full_unstemmed | Band structures and optical properties of InGaNAs quantum wells |
| title_short | Band structures and optical properties of InGaNAs quantum wells |
| title_sort | band structures and optical properties of inganas quantum wells |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics |
| url | https://hdl.handle.net/10356/3436 |
| work_keys_str_mv | AT ngsaytyam bandstructuresandopticalpropertiesofinganasquantumwells |