A study on electromigration by driving force approach for submicron copper interconnect
The prime interest of this thesis work is to investigate the physics of electromigration failure in submicron Cu interconnections including the effect of surrounding materials. A combined driving force model, including the forces from the stress and temperature gradients is presented. Experiments ar...
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Format: | Thesis |
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2008
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Online Access: | https://hdl.handle.net/10356/3479 |
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author | Roy, Arijit |
author2 | Tan Cher Ming |
author_facet | Tan Cher Ming Roy, Arijit |
author_sort | Roy, Arijit |
collection | NTU |
description | The prime interest of this thesis work is to investigate the physics of electromigration failure in submicron Cu interconnections including the effect of surrounding materials. A combined driving force model, including the forces from the stress and temperature gradients is presented. Experiments are conducted and good correlations with model predictions are obtained. |
first_indexed | 2024-10-01T04:51:30Z |
format | Thesis |
id | ntu-10356/3479 |
institution | Nanyang Technological University |
last_indexed | 2024-10-01T04:51:30Z |
publishDate | 2008 |
record_format | dspace |
spelling | ntu-10356/34792023-07-04T17:32:34Z A study on electromigration by driving force approach for submicron copper interconnect Roy, Arijit Tan Cher Ming School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits The prime interest of this thesis work is to investigate the physics of electromigration failure in submicron Cu interconnections including the effect of surrounding materials. A combined driving force model, including the forces from the stress and temperature gradients is presented. Experiments are conducted and good correlations with model predictions are obtained. DOCTOR OF PHILOSOPHY (EEE) 2008-09-17T09:30:48Z 2008-09-17T09:30:48Z 2007 2007 Thesis Roy, A. (2007). A study on electromigration by driving force approach for submicron copper interconnect. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/3479 10.32657/10356/3479 Nanyang Technological University application/pdf |
spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits Roy, Arijit A study on electromigration by driving force approach for submicron copper interconnect |
title | A study on electromigration by driving force approach for submicron copper interconnect |
title_full | A study on electromigration by driving force approach for submicron copper interconnect |
title_fullStr | A study on electromigration by driving force approach for submicron copper interconnect |
title_full_unstemmed | A study on electromigration by driving force approach for submicron copper interconnect |
title_short | A study on electromigration by driving force approach for submicron copper interconnect |
title_sort | study on electromigration by driving force approach for submicron copper interconnect |
topic | DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits |
url | https://hdl.handle.net/10356/3479 |
work_keys_str_mv | AT royarijit astudyonelectromigrationbydrivingforceapproachforsubmicroncopperinterconnect AT royarijit studyonelectromigrationbydrivingforceapproachforsubmicroncopperinterconnect |