A 2.45GHz CMOS PA+T/R switch for wireless communication
This thesis describes the design of an RF CMOS Power Amplifier (PA) combined with a T/R switch in a conventional CMOS process. The Power Amplifier is designed for all applications in the ISM (Industry Science and Medical) band, which has a transmit frequency of 2.4~2.4835 GHz and requires a peak out...
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| Format: | Thesis |
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2008
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| Online Access: | https://hdl.handle.net/10356/3514 |
| _version_ | 1811684683417649152 |
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| author | Hu, Changhui |
| author2 | Do, Manh Anh |
| author_facet | Do, Manh Anh Hu, Changhui |
| author_sort | Hu, Changhui |
| collection | NTU |
| description | This thesis describes the design of an RF CMOS Power Amplifier (PA) combined with a T/R switch in a conventional CMOS process. The Power Amplifier is designed for all applications in the ISM (Industry Science and Medical) band, which has a transmit frequency of 2.4~2.4835 GHz and requires a peak output power of 100mW (EIRP). A Class A CMOS PA with T/R switch in a 0.18um thick gate standard CMOS process which can generate 100mW of output power into a 50ohms load is presented in this report. Packaging, PCB and testing issues are also described in this report. |
| first_indexed | 2024-10-01T04:32:31Z |
| format | Thesis |
| id | ntu-10356/3514 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T04:32:31Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/35142023-07-04T17:34:06Z A 2.45GHz CMOS PA+T/R switch for wireless communication Hu, Changhui Do, Manh Anh School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Wireless communication systems This thesis describes the design of an RF CMOS Power Amplifier (PA) combined with a T/R switch in a conventional CMOS process. The Power Amplifier is designed for all applications in the ISM (Industry Science and Medical) band, which has a transmit frequency of 2.4~2.4835 GHz and requires a peak output power of 100mW (EIRP). A Class A CMOS PA with T/R switch in a 0.18um thick gate standard CMOS process which can generate 100mW of output power into a 50ohms load is presented in this report. Packaging, PCB and testing issues are also described in this report. MASTER OF ENGINEERING (EEE) 2008-09-17T09:31:26Z 2008-09-17T09:31:26Z 2006 2006 Thesis Hu, C. (2006). A 2.45GHz CMOS PA+T/R switch for wireless communication. Master’s thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/3514 10.32657/10356/3514 Nanyang Technological University 138 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Wireless communication systems Hu, Changhui A 2.45GHz CMOS PA+T/R switch for wireless communication |
| title | A 2.45GHz CMOS PA+T/R switch for wireless communication |
| title_full | A 2.45GHz CMOS PA+T/R switch for wireless communication |
| title_fullStr | A 2.45GHz CMOS PA+T/R switch for wireless communication |
| title_full_unstemmed | A 2.45GHz CMOS PA+T/R switch for wireless communication |
| title_short | A 2.45GHz CMOS PA+T/R switch for wireless communication |
| title_sort | 2 45ghz cmos pa t r switch for wireless communication |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Wireless communication systems |
| url | https://hdl.handle.net/10356/3514 |
| work_keys_str_mv | AT huchanghui a245ghzcmospatrswitchforwirelesscommunication AT huchanghui 245ghzcmospatrswitchforwirelesscommunication |