Failure mechanisms in HfO2 high-k gate stack MOSFETs
The failure mechanisms in HfO2 high-k/polycrystalline-silicon (poly-Si) and HfO2 high-k/TaN/TiN gate stack n/p-metal-oxide-semiconductor field effect transistors (MOSFETs) under inversion and accumulation mode constant voltage stress have been studied both electrically and physically with the aid...
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| Format: | Thesis |
| Published: |
2008
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| Online Access: | https://hdl.handle.net/10356/3538 |
| _version_ | 1826118410848698368 |
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| author | Ranjan Rakesh |
| author2 | Pey Kin Leong |
| author_facet | Pey Kin Leong Ranjan Rakesh |
| author_sort | Ranjan Rakesh |
| collection | NTU |
| description | The failure mechanisms in HfO2 high-k/polycrystalline-silicon (poly-Si) and
HfO2 high-k/TaN/TiN gate stack n/p-metal-oxide-semiconductor field effect
transistors (MOSFETs) under inversion and accumulation mode constant voltage stress have been studied both electrically and physically with the aid of high resolution transmission electron microscopy (HRTEM), energy dispersive spectrometry (EDS) and electron energy loss spectrometry (EELS) and EELS elemental dot mapping. Silicon oxynitride (SiOxNy)/poly-Si, silicon nitride (Si3N4) semi-high-k/poly-Si gate stack MOSFETs have also been studied for comparison. The associated dielectric degradation has been correlated with the microstructural changes during breakdown event to understand the actual failure mechanisms. It is found that the breakdown phenomenon and the fundamental failure mechanisms responsible for
breakdown in HfO2 high-k gate stacks are significantly different from that of SiOxNy and Si3N4 gate stack MOSFETs. Several new failure mechanisms/defects have been observed in HfO2 high-k/poly-Si and HfO2 high-k/TaN/TiN gate stack n/pMOSFETs. |
| first_indexed | 2024-10-01T04:42:57Z |
| format | Thesis |
| id | ntu-10356/3538 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T04:42:57Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/35382023-07-04T16:57:01Z Failure mechanisms in HfO2 high-k gate stack MOSFETs Ranjan Rakesh Pey Kin Leong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits The failure mechanisms in HfO2 high-k/polycrystalline-silicon (poly-Si) and HfO2 high-k/TaN/TiN gate stack n/p-metal-oxide-semiconductor field effect transistors (MOSFETs) under inversion and accumulation mode constant voltage stress have been studied both electrically and physically with the aid of high resolution transmission electron microscopy (HRTEM), energy dispersive spectrometry (EDS) and electron energy loss spectrometry (EELS) and EELS elemental dot mapping. Silicon oxynitride (SiOxNy)/poly-Si, silicon nitride (Si3N4) semi-high-k/poly-Si gate stack MOSFETs have also been studied for comparison. The associated dielectric degradation has been correlated with the microstructural changes during breakdown event to understand the actual failure mechanisms. It is found that the breakdown phenomenon and the fundamental failure mechanisms responsible for breakdown in HfO2 high-k gate stacks are significantly different from that of SiOxNy and Si3N4 gate stack MOSFETs. Several new failure mechanisms/defects have been observed in HfO2 high-k/poly-Si and HfO2 high-k/TaN/TiN gate stack n/pMOSFETs. DOCTOR OF PHILOSOPHY (EEE) 2008-09-17T09:31:51Z 2008-09-17T09:31:51Z 2007 2007 Thesis https://hdl.handle.net/10356/3538 10.32657/10356/3538 Nanyang Technological University application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Ranjan Rakesh Failure mechanisms in HfO2 high-k gate stack MOSFETs |
| title | Failure mechanisms in HfO2 high-k gate stack MOSFETs |
| title_full | Failure mechanisms in HfO2 high-k gate stack MOSFETs |
| title_fullStr | Failure mechanisms in HfO2 high-k gate stack MOSFETs |
| title_full_unstemmed | Failure mechanisms in HfO2 high-k gate stack MOSFETs |
| title_short | Failure mechanisms in HfO2 high-k gate stack MOSFETs |
| title_sort | failure mechanisms in hfo2 high k gate stack mosfets |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits |
| url | https://hdl.handle.net/10356/3538 |
| work_keys_str_mv | AT ranjanrakesh failuremechanismsinhfo2highkgatestackmosfets |