Characterization of flourosilicate glass (FSG) as low dielectric constant material

The characterization of flourine doped oxide (FSG) film as a low-k- dielectric material involved three main parts. In the first part of the project, the effect flourine incorporation and increasing flourine content on the film structure and dielectric constant were studied. The incorporation of Si-...

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Bibliographic Details
Main Author: Teh, Young Way.
Other Authors: Wong, Terence Kin Shun
Format: Thesis
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/3542
Description
Summary:The characterization of flourine doped oxide (FSG) film as a low-k- dielectric material involved three main parts. In the first part of the project, the effect flourine incorporation and increasing flourine content on the film structure and dielectric constant were studied. The incorporation of Si-Fx bonds generates significant structural change in the SiO matrix.