PZT thin-films : structure and properties
There is always this ongoing debate of using which deposition technique to acquire the best thin films possible. In this study, lead zirconium titanate, PZT, a ferroelectric material is deposited using both sol-gel deposition and pulsed laser deposition method and their electrical properties are inv...
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| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
2010
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| Online Access: | http://hdl.handle.net/10356/35664 |
| _version_ | 1826112572656451584 |
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| author | Lim, Chee Yong. |
| author2 | Chen Lang |
| author_facet | Chen Lang Lim, Chee Yong. |
| author_sort | Lim, Chee Yong. |
| collection | NTU |
| description | There is always this ongoing debate of using which deposition technique to acquire the best thin films possible. In this study, lead zirconium titanate, PZT, a ferroelectric material is deposited using both sol-gel deposition and pulsed laser deposition method and their electrical properties are investigated and compared. PZT is tested because of its large number of applications in various devices. Thus the purpose of this report is to distinguish the two different deposition methods so as to find a more efficient and effective way of getting to produce the thin films. After both depositions are done, different tests are carried out for example XRD diffraction, I-V, P-V and C-V characterization. The X-ray diffraction pattern shows single phase composition of PbZr0.52Ti0.4803 phase composition without any impurities. The dielectric measurement shows a diffused phase transition. The curie transition temperature of the films is found to be at 385ºC. The leakage current is also very little in both the samples. The maximum polarization observe in PLD samples and the cohesive fields are also less when comparing PLD samples and sol-gel samples. So from this research, it is found that using PLD technique is much more favorable than using sol-gel deposition method. |
| first_indexed | 2024-10-01T03:09:16Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/35664 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:09:16Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/356642023-03-04T15:44:02Z PZT thin-films : structure and properties Lim, Chee Yong. Chen Lang School of Materials Science and Engineering DRNTU::Engineering There is always this ongoing debate of using which deposition technique to acquire the best thin films possible. In this study, lead zirconium titanate, PZT, a ferroelectric material is deposited using both sol-gel deposition and pulsed laser deposition method and their electrical properties are investigated and compared. PZT is tested because of its large number of applications in various devices. Thus the purpose of this report is to distinguish the two different deposition methods so as to find a more efficient and effective way of getting to produce the thin films. After both depositions are done, different tests are carried out for example XRD diffraction, I-V, P-V and C-V characterization. The X-ray diffraction pattern shows single phase composition of PbZr0.52Ti0.4803 phase composition without any impurities. The dielectric measurement shows a diffused phase transition. The curie transition temperature of the films is found to be at 385ºC. The leakage current is also very little in both the samples. The maximum polarization observe in PLD samples and the cohesive fields are also less when comparing PLD samples and sol-gel samples. So from this research, it is found that using PLD technique is much more favorable than using sol-gel deposition method. Bachelor of Engineering (Materials Engineering) 2010-04-22T06:31:17Z 2010-04-22T06:31:17Z 2010 2010 Final Year Project (FYP) http://hdl.handle.net/10356/35664 en Nanyang Technological University 29 p. application/pdf |
| spellingShingle | DRNTU::Engineering Lim, Chee Yong. PZT thin-films : structure and properties |
| title | PZT thin-films : structure and properties |
| title_full | PZT thin-films : structure and properties |
| title_fullStr | PZT thin-films : structure and properties |
| title_full_unstemmed | PZT thin-films : structure and properties |
| title_short | PZT thin-films : structure and properties |
| title_sort | pzt thin films structure and properties |
| topic | DRNTU::Engineering |
| url | http://hdl.handle.net/10356/35664 |
| work_keys_str_mv | AT limcheeyong pztthinfilmsstructureandproperties |