Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs)

High gain metamorphic InP/InGaAs/InP DHBTs (double heterojunction bipolar transistors) on GaAs substrate fabricated using complete NTU in-house process have been demonstrated in this investigation. DC and RF characterization of various MHBTs (metamorphic HBTs), including noise and power measurements...

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Bibliographic Details
Main Author: Yang, Hong
Other Authors: K. Radhakrishnan
Format: Thesis
Published: 2008
Subjects:
Online Access:https://hdl.handle.net/10356/3833
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author Yang, Hong
author2 K. Radhakrishnan
author_facet K. Radhakrishnan
Yang, Hong
author_sort Yang, Hong
collection NTU
description High gain metamorphic InP/InGaAs/InP DHBTs (double heterojunction bipolar transistors) on GaAs substrate fabricated using complete NTU in-house process have been demonstrated in this investigation. DC and RF characterization of various MHBTs (metamorphic HBTs), including noise and power measurements, elevated temperature and current stress measurements, evaluation of thermal resistance, and performance comparison of devices grown by different growth techniques have been accomplished. Other important tasks completed include new device design and mask layout, and development of two-micron or less emitter width device process technology.
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spelling ntu-10356/38332023-07-04T16:57:14Z Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs) Yang, Hong K. Radhakrishnan School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors High gain metamorphic InP/InGaAs/InP DHBTs (double heterojunction bipolar transistors) on GaAs substrate fabricated using complete NTU in-house process have been demonstrated in this investigation. DC and RF characterization of various MHBTs (metamorphic HBTs), including noise and power measurements, elevated temperature and current stress measurements, evaluation of thermal resistance, and performance comparison of devices grown by different growth techniques have been accomplished. Other important tasks completed include new device design and mask layout, and development of two-micron or less emitter width device process technology. DOCTOR OF PHILOSOPHY (EEE) 2008-09-17T09:38:27Z 2008-09-17T09:38:27Z 2005 2005 Thesis Yang, H. (2005). Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs). Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/3833 10.32657/10356/3833 Nanyang Technological University application/pdf
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Yang, Hong
Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs)
title Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs)
title_full Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs)
title_fullStr Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs)
title_full_unstemmed Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs)
title_short Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs)
title_sort fabrication and characterization of inp ingaas metamorphic heterojunction bipolar transistors hbts
topic DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
url https://hdl.handle.net/10356/3833
work_keys_str_mv AT yanghong fabricationandcharacterizationofinpingaasmetamorphicheterojunctionbipolartransistorshbts