Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs)
High gain metamorphic InP/InGaAs/InP DHBTs (double heterojunction bipolar transistors) on GaAs substrate fabricated using complete NTU in-house process have been demonstrated in this investigation. DC and RF characterization of various MHBTs (metamorphic HBTs), including noise and power measurements...
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| Format: | Thesis |
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2008
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| Online Access: | https://hdl.handle.net/10356/3833 |
| _version_ | 1826119159287644160 |
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| author | Yang, Hong |
| author2 | K. Radhakrishnan |
| author_facet | K. Radhakrishnan Yang, Hong |
| author_sort | Yang, Hong |
| collection | NTU |
| description | High gain metamorphic InP/InGaAs/InP DHBTs (double heterojunction bipolar transistors) on GaAs substrate fabricated using complete NTU in-house process have been demonstrated in this investigation. DC and RF characterization of various MHBTs (metamorphic HBTs), including noise and power measurements, elevated temperature and current stress measurements, evaluation of thermal resistance, and performance comparison of devices grown by different growth techniques have been accomplished. Other important tasks completed include new device design and mask layout, and development of two-micron or less emitter width device process technology. |
| first_indexed | 2024-10-01T04:55:32Z |
| format | Thesis |
| id | ntu-10356/3833 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T04:55:32Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/38332023-07-04T16:57:14Z Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs) Yang, Hong K. Radhakrishnan School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors High gain metamorphic InP/InGaAs/InP DHBTs (double heterojunction bipolar transistors) on GaAs substrate fabricated using complete NTU in-house process have been demonstrated in this investigation. DC and RF characterization of various MHBTs (metamorphic HBTs), including noise and power measurements, elevated temperature and current stress measurements, evaluation of thermal resistance, and performance comparison of devices grown by different growth techniques have been accomplished. Other important tasks completed include new device design and mask layout, and development of two-micron or less emitter width device process technology. DOCTOR OF PHILOSOPHY (EEE) 2008-09-17T09:38:27Z 2008-09-17T09:38:27Z 2005 2005 Thesis Yang, H. (2005). Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs). Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/3833 10.32657/10356/3833 Nanyang Technological University application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Yang, Hong Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs) |
| title | Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs) |
| title_full | Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs) |
| title_fullStr | Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs) |
| title_full_unstemmed | Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs) |
| title_short | Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs) |
| title_sort | fabrication and characterization of inp ingaas metamorphic heterojunction bipolar transistors hbts |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors |
| url | https://hdl.handle.net/10356/3833 |
| work_keys_str_mv | AT yanghong fabricationandcharacterizationofinpingaasmetamorphicheterojunctionbipolartransistorshbts |