Investigation on bond strength and contact resistance of copper-copper bonds for 3D integrated circuits
Advancement of the current Two-Dimensional integrated circuits (2D-ICs) is limited by increasing interconnect delay and huge power dissipation problem. Hence, Three-Dimensional integrated circuits (3D-ICs) technology, in which active layers are stacked vertically and linked by short vertical interla...
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| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
2010
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| Online Access: | http://hdl.handle.net/10356/38612 |
| _version_ | 1811689338161856512 |
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| author | Ong, Sharon Zi Xuan. |
| author2 | Gan Chee Lip |
| author_facet | Gan Chee Lip Ong, Sharon Zi Xuan. |
| author_sort | Ong, Sharon Zi Xuan. |
| collection | NTU |
| description | Advancement of the current Two-Dimensional integrated circuits (2D-ICs) is limited by increasing interconnect delay and huge power dissipation problem. Hence, Three-Dimensional integrated circuits (3D-ICs) technology, in which active layers are stacked vertically and linked by short vertical interlayer interconnects, is an emerging solution as not only does it effectively overcome limitations of the 2D-ICs technology by reducing interconnects length, it also allows the heterogeneous integration of different technologies. Metal-to-metal bonding, in particular copper-copper bonding, is an attractive technology for fabricating 3D-ICs because of its dual function of electrical connection and mechanical link between the active layers. And copper is chosen for its good electrical and thermal conductivities, and high electro-migration resistance.
In this report, copper-copper thermo-compression is used as the bonding technology whereby compressive force and heat are simultaneously applied to bring two otherwise separated copper surfaces together. Mating surfaces‟ cleanliness, bonding temperature, applied load, duration and environment need to be optimized so as to achieve high quality bond. Other than these factors, film thickness is predicted to be one of the contributing factors to bond integrity. Hence investigation on its effect is carried out by bonding samples with varying film thickness. Experimental results however, do not validate the suggested direct correlation between film thickness and bond quality. |
| first_indexed | 2024-10-01T05:46:31Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/38612 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:46:31Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/386122023-03-04T15:42:16Z Investigation on bond strength and contact resistance of copper-copper bonds for 3D integrated circuits Ong, Sharon Zi Xuan. Gan Chee Lip School of Materials Science and Engineering DRNTU::Engineering::Materials::Electronic packaging materials Advancement of the current Two-Dimensional integrated circuits (2D-ICs) is limited by increasing interconnect delay and huge power dissipation problem. Hence, Three-Dimensional integrated circuits (3D-ICs) technology, in which active layers are stacked vertically and linked by short vertical interlayer interconnects, is an emerging solution as not only does it effectively overcome limitations of the 2D-ICs technology by reducing interconnects length, it also allows the heterogeneous integration of different technologies. Metal-to-metal bonding, in particular copper-copper bonding, is an attractive technology for fabricating 3D-ICs because of its dual function of electrical connection and mechanical link between the active layers. And copper is chosen for its good electrical and thermal conductivities, and high electro-migration resistance. In this report, copper-copper thermo-compression is used as the bonding technology whereby compressive force and heat are simultaneously applied to bring two otherwise separated copper surfaces together. Mating surfaces‟ cleanliness, bonding temperature, applied load, duration and environment need to be optimized so as to achieve high quality bond. Other than these factors, film thickness is predicted to be one of the contributing factors to bond integrity. Hence investigation on its effect is carried out by bonding samples with varying film thickness. Experimental results however, do not validate the suggested direct correlation between film thickness and bond quality. Bachelor of Engineering (Materials Engineering) 2010-05-13T07:36:32Z 2010-05-13T07:36:32Z 2010 2010 Final Year Project (FYP) http://hdl.handle.net/10356/38612 en Nanyang Technological University 50 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Electronic packaging materials Ong, Sharon Zi Xuan. Investigation on bond strength and contact resistance of copper-copper bonds for 3D integrated circuits |
| title | Investigation on bond strength and contact resistance of copper-copper bonds for 3D integrated circuits |
| title_full | Investigation on bond strength and contact resistance of copper-copper bonds for 3D integrated circuits |
| title_fullStr | Investigation on bond strength and contact resistance of copper-copper bonds for 3D integrated circuits |
| title_full_unstemmed | Investigation on bond strength and contact resistance of copper-copper bonds for 3D integrated circuits |
| title_short | Investigation on bond strength and contact resistance of copper-copper bonds for 3D integrated circuits |
| title_sort | investigation on bond strength and contact resistance of copper copper bonds for 3d integrated circuits |
| topic | DRNTU::Engineering::Materials::Electronic packaging materials |
| url | http://hdl.handle.net/10356/38612 |
| work_keys_str_mv | AT ongsharonzixuan investigationonbondstrengthandcontactresistanceofcoppercopperbondsfor3dintegratedcircuits |