Nanoscale Si/SiGe based quantum well infrared photodetectors
67 p.
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| Format: | Thesis-Master by Coursework |
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Nanyang Technological University
2010
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| Online Access: | http://hdl.handle.net/10356/39051 |
| _version_ | 1826126622785273856 |
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| author | Agarwala, Shweta |
| author2 | ZHANG Dao Hua |
| author_facet | ZHANG Dao Hua Agarwala, Shweta |
| author_sort | Agarwala, Shweta |
| collection | NTU |
| description | 67 p. |
| first_indexed | 2024-10-01T06:55:41Z |
| format | Thesis-Master by Coursework |
| id | ntu-10356/39051 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T06:55:41Z |
| publishDate | 2010 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/390512023-07-04T16:02:29Z Nanoscale Si/SiGe based quantum well infrared photodetectors Agarwala, Shweta ZHANG Dao Hua School of Electrical and Electronic Engineering EDHZHANG@ntu.edu.sg DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits 67 p. In this study, the photoresponse of Si/ SiGe based quantum well infrared photodetector structures was investigated. Two samples of SiGe and other SiGeC quantum well heterostructures were grown. Carbon was incorporated to reduce the strain and to increase the film stability and the bandgap. After processing the responsitivity of the detector was measured as a function of wavelength using the UV- visible spectrophotometer. Highest responsitivity of 1151.55mA/W has been shown, which very well lies in the infrared region. We also tried to detect any intersubband transitions. However, they were not observed in the samples due to a number of reasons. To obtain further insights in the structural quality of sample photoluminescence spectroscopy detecting the interband electron-hole pair recombination was performed. With the rise in the temperature from 5K to 70K the PL peak shifted form about 1.13E to about 1.25E for Sio.75Geo.25 material. The X-ray diffraction measurements were also carried out. The diffraction pattern of the SiGeC sample looks similar to SiGe at the first glance. But on close analysis and comparison of the diffraction patterns, the reduction of strain is evident for the former case. Master of Science (Microelectronics) 2010-05-21T04:38:45Z 2010-05-21T04:38:45Z 2007 2007 Thesis-Master by Coursework http://hdl.handle.net/10356/39051 application/pdf Nanyang Technological University |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Agarwala, Shweta Nanoscale Si/SiGe based quantum well infrared photodetectors |
| title | Nanoscale Si/SiGe based quantum well infrared photodetectors |
| title_full | Nanoscale Si/SiGe based quantum well infrared photodetectors |
| title_fullStr | Nanoscale Si/SiGe based quantum well infrared photodetectors |
| title_full_unstemmed | Nanoscale Si/SiGe based quantum well infrared photodetectors |
| title_short | Nanoscale Si/SiGe based quantum well infrared photodetectors |
| title_sort | nanoscale si sige based quantum well infrared photodetectors |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits |
| url | http://hdl.handle.net/10356/39051 |
| work_keys_str_mv | AT agarwalashweta nanoscalesisigebasedquantumwellinfraredphotodetectors |