Study of digital breakdown in pMOSFETs with ultrathin gate dielectric and its significance to reliability assessment
90 p.
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| Other Authors: | |
| Format: | Thesis |
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2010
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| Online Access: | http://hdl.handle.net/10356/39146 |
| _version_ | 1824455266425372672 |
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| author | Ashwin Srinivas. |
| author2 | Pey Kin Leong |
| author_facet | Pey Kin Leong Ashwin Srinivas. |
| author_sort | Ashwin Srinivas. |
| collection | NTU |
| description | 90 p. |
| first_indexed | 2025-02-19T03:35:29Z |
| format | Thesis |
| id | ntu-10356/39146 |
| institution | Nanyang Technological University |
| last_indexed | 2025-02-19T03:35:29Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/391462023-07-04T15:03:46Z Study of digital breakdown in pMOSFETs with ultrathin gate dielectric and its significance to reliability assessment Ashwin Srinivas. Pey Kin Leong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits 90 p. The purpose of this project is to study the gate oxide breakdown in ultra-thin pMOSFETs using current-limited multiple cycle constant voltage stress tests. Samples of various dimensions are to be subjected to low voltage stresses in inversion mode and the gradual degradation of the device characteristics recorded. The evolution of the gate current, under the phenomenon of progressive breakdown, provides an insight into the evolution of the conductor-like percolation path within the oxide layer. Master of Science (Microelectronics) 2010-05-21T04:45:49Z 2010-05-21T04:45:49Z 2007 2007 Thesis http://hdl.handle.net/10356/39146 application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Ashwin Srinivas. Study of digital breakdown in pMOSFETs with ultrathin gate dielectric and its significance to reliability assessment |
| title | Study of digital breakdown in pMOSFETs with ultrathin gate dielectric and its significance to reliability assessment |
| title_full | Study of digital breakdown in pMOSFETs with ultrathin gate dielectric and its significance to reliability assessment |
| title_fullStr | Study of digital breakdown in pMOSFETs with ultrathin gate dielectric and its significance to reliability assessment |
| title_full_unstemmed | Study of digital breakdown in pMOSFETs with ultrathin gate dielectric and its significance to reliability assessment |
| title_short | Study of digital breakdown in pMOSFETs with ultrathin gate dielectric and its significance to reliability assessment |
| title_sort | study of digital breakdown in pmosfets with ultrathin gate dielectric and its significance to reliability assessment |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits |
| url | http://hdl.handle.net/10356/39146 |
| work_keys_str_mv | AT ashwinsrinivas studyofdigitalbreakdowninpmosfetswithultrathingatedielectricanditssignificancetoreliabilityassessment |