Fabrication and characterization of silicon-germanium schottky diode
91 p.
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Thesis |
| Published: |
2010
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/39149 |
| _version_ | 1826110092021334016 |
|---|---|
| author | Chakravarthi Nanda Kumar |
| author2 | Tse Man Siu |
| author_facet | Tse Man Siu Chakravarthi Nanda Kumar |
| author_sort | Chakravarthi Nanda Kumar |
| collection | NTU |
| description | 91 p. |
| first_indexed | 2024-10-01T02:28:47Z |
| format | Thesis |
| id | ntu-10356/39149 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T02:28:47Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/391492023-07-04T15:29:39Z Fabrication and characterization of silicon-germanium schottky diode Chakravarthi Nanda Kumar Tse Man Siu School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering 91 p. Schottky diodes have been widely used in power detection and microwave circuits due to their high switching speeds and low voltage drop. They are often fabricated by depositing metals on n-type or p-type semiconductor materials [1]. Silicon and Silicon Germanium Schottky diodes were fabricated and characterized in this project. Chromium, Gold, Copper, Titanium, Nickel, Nickel-Platinum were used as Schottky metals in the fabrication of n-type Silicon and Silicon Germanium Schottky diodes. Silicon Germanium films were grown epitaxially on the Silicon substrate. The Schottky characteristics, which include barrier height, series resistance and ideality factors, were studied and compared for each of these metals. Behavior of the Schottky characteristics at different alloying temperatures was also studied. A strong dependence of these characteristics on the alloying temperatures, procedures were observed. Master of Science (Microelectronics) 2010-05-21T04:45:58Z 2010-05-21T04:45:58Z 2007 2007 Thesis http://hdl.handle.net/10356/39149 application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Chakravarthi Nanda Kumar Fabrication and characterization of silicon-germanium schottky diode |
| title | Fabrication and characterization of silicon-germanium schottky diode |
| title_full | Fabrication and characterization of silicon-germanium schottky diode |
| title_fullStr | Fabrication and characterization of silicon-germanium schottky diode |
| title_full_unstemmed | Fabrication and characterization of silicon-germanium schottky diode |
| title_short | Fabrication and characterization of silicon-germanium schottky diode |
| title_sort | fabrication and characterization of silicon germanium schottky diode |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | http://hdl.handle.net/10356/39149 |
| work_keys_str_mv | AT chakravarthinandakumar fabricationandcharacterizationofsilicongermaniumschottkydiode |