Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors
The results described in this work demonstrate the comprehensive characterization of C-doped GaAs and In0.53Ga0.47As materials and C-doped GaAs-based and InP-based HBT devices grown by SSMBE system using CBr4 as p-type dopant precursor. The characteristics of C-doped GaAs materials, such as the hole...
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| Format: | Thesis |
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2008
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| Online Access: | https://hdl.handle.net/10356/3996 |
| _version_ | 1811679569225187328 |
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| author | Zhang, Rong |
| author2 | Yoon Soon Fatt |
| author_facet | Yoon Soon Fatt Zhang, Rong |
| author_sort | Zhang, Rong |
| collection | NTU |
| description | The results described in this work demonstrate the comprehensive characterization of C-doped GaAs and In0.53Ga0.47As materials and C-doped GaAs-based and InP-based HBT devices grown by SSMBE system using CBr4 as p-type dopant precursor. The characteristics of C-doped GaAs materials, such as the hole concentration, mobility, lattice mismatch, surface morphology, and optical properties, have been comprehensively investigated using various techniques, which help to gain me insight and understanding of the material properties. |
| first_indexed | 2024-10-01T03:11:14Z |
| format | Thesis |
| id | ntu-10356/3996 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T03:11:14Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/39962023-07-04T16:43:32Z Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors Zhang, Rong Yoon Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors The results described in this work demonstrate the comprehensive characterization of C-doped GaAs and In0.53Ga0.47As materials and C-doped GaAs-based and InP-based HBT devices grown by SSMBE system using CBr4 as p-type dopant precursor. The characteristics of C-doped GaAs materials, such as the hole concentration, mobility, lattice mismatch, surface morphology, and optical properties, have been comprehensively investigated using various techniques, which help to gain me insight and understanding of the material properties. DOCTOR OF PHILOSOPHY (EEE) 2008-09-17T09:42:06Z 2008-09-17T09:42:06Z 2005 2005 Thesis Zhang, R. (2005). Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/3996 10.32657/10356/3996 Nanyang Technological University application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Zhang, Rong Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors |
| title | Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors |
| title_full | Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors |
| title_fullStr | Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors |
| title_full_unstemmed | Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors |
| title_short | Growth and characterization of carbon doped GaAs- and InP- based heterojunction bipolar transistors |
| title_sort | growth and characterization of carbon doped gaas and inp based heterojunction bipolar transistors |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors |
| url | https://hdl.handle.net/10356/3996 |
| work_keys_str_mv | AT zhangrong growthandcharacterizationofcarbondopedgaasandinpbasedheterojunctionbipolartransistors |